LY62L51216
Rev. 1.6
512K X 16 BIT LOW POWER CMOS SRAM
REVISION HISTORY
Revision
Rev. 1.0
Rev. 1.1
Rev. 1.2
Rev. 1.3
Rev. 1.4
Description
Initial Issue
Added I
SB
Spec.
Revised
ORDERING INFORMATION
Added SL Spec.
Added I
SB1
/I
DR
values when T
A
= 25
℃
and T
A
= 40
℃
Revised
FEATURES
&
ORDERING INFORMATION
Lead free and green package available
to
Green package
available
Added packing type in
ORDERING INFORMATION
Deleted T
SOLDER
in
ABSOLUTE MAXIMUN RATINGS
Revised
ORDERING INFORMATION
in page 11
Deleted E grade
Issue Date
Nov.1.2007
Feb.1.2008
Feb.13.2008
Jul.2.2008
Mar.30.2009
Rev. 1.5
Rev. 1.6
Aug.30.2010
Apr.12.2011
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
0
LY62L51216
Rev. 1.6
512K X 16 BIT LOW POWER CMOS SRAM
GENERAL DESCRIPTION
The LY62L51216 is a 8,388,608-bit low power
CMOS static random access memory organized as
524,288 words by 16 bits. It is fabricated using very
high performance, high reliability CMOS technology.
Its standby current is stable within the range of
operating temperature.
The LY62L51216 is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
The LY62L51216 operates from a single power
supply of 2.7V ~ 3.6V and all inputs and outputs are
fully TTL compatible
FEATURES
Fast access time : 55/70ns
Low power consumption:
Operating current : 30/20mA (TYP.)
Standby current : 5A (TYP.) LL-version
1.5A (TYP.) SL-version
Single 2.7V ~ 3.6V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
Data retention voltage : 1.2V (MIN.)
Green package available
Package : 44-pin 400mil TSOP-II
48-ball 6mm x 8mm TFBGA
PRODUCT FAMILY
Product
Family
LY62L51216
LY62L51216(I)
Operating
Temperature
0 ~ 70℃
-40 ~ 85℃
Vcc Range
2.7 ~ 3.6V
2.7 ~ 3.6V
Speed
55/70ns
55/70ns
Power Dissipation
Standby(I
SB1,
TYP.)
Operating(Icc,TYP.)
5µA(LL)/1.5µA(SL)
30/20mA
5µA(LL)/1.5µA(SL)
30/20mA
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
SYMBOL
DESCRIPTION
Address Inputs
Chip Enable Input
Write Enable Input
Output Enable Input
Lower Byte Control
Upper Byte Control
Power Supply
Ground
Vcc
Vss
A0 - A18
CE#
WE#
OE#
LB#
UB#
V
CC
DQ0 – DQ15 Data Inputs/Outputs
DECODER
512Kx16
MEMORY ARRAY
A0-A18
DQ0-DQ7
Lower Byte
DQ8-DQ15
Upper Byte
V
SS
I/O DATA
CIRCUIT
COLUMN I/O
CE#
WE#
OE#
LB#
UB#
CONTROL
CIRCUIT
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
1
LY62L51216
Rev. 1.6
512K X 16 BIT LOW POWER CMOS SRAM
PIN CONFIGURATION
A4
A3
A2
A1
A0
CE#
DQ0
DQ1
DQ2
DQ3
Vcc
Vss
DQ4
DQ5
DQ6
DQ7
WE#
A18
A17
A16
A15
A14
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
TSOP II
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE#
UB#
LB#
DQ15
DQ14
DQ13
DQ12
Vss
Vcc
DQ11
DQ10
DQ9
DQ8
A8
A9
A10
A11
A12
A13
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on V
CC
relative to V
SS
Voltage on any other pin relative to V
SS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
SYMBOL
V
T1
V
T2
T
A
T
STG
P
D
I
OUT
RATING
-0.5 to 4.6
-0.5 to V
CC
+0.5
0 to 70(C grade)
-40 to 85(I grade)
-65 to 150
1
50
UNIT
V
V
℃
℃
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
LY62L51216
A
B
C
D
E
F
G
H
LB# OE#
DQ8 UB#
A0
A3
A1
A4
A6
A7
A2
NC
CE# DQ0
DQ1 DQ2
DQ3 Vcc
DQ9 DQ10 A5
Vss DQ11 A17
Vcc DQ12 NC
DQ14 DQ13 A14
DQ15 NC
A18
A8
A12
A9
A16 DQ4 Vss
A15 DQ5 DQ6
A13 WE# DQ7
A10
A11
NC
1
2
3
4
TFBGA
5
6
2
LY62L51216
Rev. 1.6
512K X 16 BIT LOW POWER CMOS SRAM
TRUTH TABLE
MODE
Standby
Output Disable
Read
CE#
H
X
L
L
L
L
L
L
L
L
OE#
X
X
H
H
L
L
L
X
X
X
WE# LB#
X
X
H
H
H
H
H
L
L
L
X
H
L
X
L
H
L
L
H
L
UB#
X
H
X
L
H
L
L
H
L
L
I/O OPERATION
DQ0-DQ7
DQ8-DQ15
High – Z
High – Z
High – Z
High – Z
High – Z
High – Z
High – Z
High – Z
D
OUT
High – Z
High – Z
D
OUT
D
OUT
D
OUT
D
IN
High – Z
High – Z
D
IN
D
IN
D
IN
SUPPLY CURRENT
I
SB
,I
SB1
I
CC
,I
CC1
I
CC
,I
CC1
Write
Note:
I
CC
,I
CC1
H = V
IH
, L = V
IL
, X = Don't care.
DC ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITION
PARAMETER
Supply Voltage
V
CC
*1
Input High Voltage
V
IH
*2
Input Low Voltage
V
IL
Input Leakage Current
I
LI
V
CC
≧
V
IN
≧
V
SS
Output Leakage
V
CC
≧
V
OUT
≧
V
SS
,
I
LO
Current
Output Disabled
Output High Voltage
V
OH
I
OH
= -1mA
Output Low Voltage
V
OL
I
OL
= 2mA
Cycle time = Min.
- 55
CE# = V
IL
,
I
CC
I
I/O
= 0mA
Average Operating
- 70
Other pins at V
IL
or V
IH
Power supply Current
Cycle time = 1µ s
I
CC1
CE# = 0.2V , I
I/O
= 0mA
Other pins at 0.2V or V
CC
- 0.2V
I
SB
CE# = V
IH.
Other pins at V
IL
or V
IH
LL
LLI
Standby Power
CE#
≧V
CC
- 0.2V
*5
25
℃
SL
Supply Current
I
SB1
Others at 0.2V or
*5
SLI
40
℃
V
CC
- 0.2V
SL
SLI
Notes:
1. V
IH
(max) = V
CC
+ 3.0V for pulse width less than 10ns.
2. V
IL
(min) = V
SS
- 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical values are measured at V
CC
= V
CC
(TYP.) and T
A
= 25
℃
5. This parameter is measured at V
CC
= 3.0V
MIN.
2.7
2.2
- 0.2
-1
-1
2.2
-
-
-
-
-
-
-
-
-
-
-
TYP.
3.0
-
-
-
-
2.7
-
30
20
4
*4
MAX.
3.6
V
CC
+0.3
0.6
1
1
-
0.4
40
30
8
1
30
50
5
5
15
20
UNIT
V
V
V
µA
µA
V
V
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
0.15
5
5
1.5
1.5
1.5
1.5
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
3
LY62L51216
Rev. 1.6
512K X 16 BIT LOW POWER CMOS SRAM
CAPACITANCE
(T
A
= 25℃, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C
IN
C
I/O
MIN.
-
-
MAX
6
8
UNIT
pF
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0.2V to V
CC
- 0.2V
3ns
1.5V
C
L
= 30pF + 1TTL, I
OH
/I
OL
= -1mA/2mA
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
PARAMETER
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low-Z
Output Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Disable to Output in High-Z
Output Hold from Address Change
LB#, UB# Access Time
LB#, UB# to High-Z Output
LB#, UB# to Low-Z Output
(2) WRITE CYCLE
PARAMETER
Write Cycle Time
Address Valid to End of Write
Chip Enable to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data to Write Time Overlap
Data Hold from End of Write Time
Output Active from End of Write
Write to Output in High-Z
LB#, UB# Valid to End of Write
SYM.
t
RC
t
AA
t
ACE
t
OE
t
CLZ
*
t
OLZ
*
t
CHZ
*
t
OHZ
*
t
OH
t
BA
t
BHZ
*
t
BLZ
*
LY62L51216-55
MIN.
MAX.
55
-
-
55
-
55
-
30
10
-
5
-
-
20
-
20
10
-
-
55
-
25
10
-
LY62L51216-70
MIN.
MAX.
70
-
-
70
-
70
-
35
10
-
5
-
-
25
-
25
10
-
-
70
-
30
10
-
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
SYM.
t
WC
t
AW
t
CW
t
AS
t
WP
t
WR
t
DW
t
DH
t
OW
*
t
WHZ
*
t
BW
LY62L51216-55
MIN.
MAX.
55
-
50
-
50
-
0
-
45
-
0
-
25
-
0
-
5
-
-
20
45
-
LY62L51216-70
MIN.
MAX.
70
-
60
-
60
-
0
-
55
-
0
-
30
-
0
-
5
-
-
25
60
-
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
*These parameters are guaranteed by device characterization, but not production tested.
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
4
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