C67040-A4207-A2 datasheet, PDF

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C67040-A4207-A2: Description25 A, 1200 V, N-CHANNEL IGBT; Categorysemiconductor Discrete semiconductor; File Size59KB，7 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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C67040-A4207-A2 Overview

25 A, 1200 V, N-CHANNEL IGBT

C67040-A4207-A2 Parametric

Parameter Name	Attribute value
Number of terminals	3
Rated off time	490 ns
Maximum collector current	25 A
Maximum Collector-Emitter Voltage	1200 V
state	TRANSFERRED
packaging shape	RECTANGULAR
Package Size	FLANGE MOUNT
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE
Number of components	1
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Channel type	N-CHANNEL
Transistor type	INSULATED GATE BIPOLAR
Rated on time	125 ns

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BUP 314S

Preliminary data

IGBT

• High switching speed

• Very low switching losses

• Low tail current

• Latch-up free

• Avalanche rated

Pin 1

Type

BUP 314S

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-gate voltage

Symbol

Values

1200

Unit

Pin 2

Ordering Code

C67040-A4207-A2

Pin 3

Package

TO-218 AB

1200V 25A

CGR

= 20 kΩ

Gate-emitter voltage

DC collector current

± 20

= 25 °C

= 90 °C

Pulsed collector current,

= 1 ms

Cpuls

= 25 °C

= 90 °C

Avalanche energy, single pulse

= 25 A,

= 50 V,

= 25

Ω

= 200 µH,

= 25 °C

Power dissipation

tot

300

-55 ... + 150

°C

= 25 °C

Chip or operating temperature

Storage temperature

stg

Semiconductor Group

Feb-07-1997

C67040-A4207-A2 Related Products

	C67040-A4207-A2	BUP314S
Description	25 A, 1200 V, N-CHANNEL IGBT	25 A, 1200 V, N-CHANNEL IGBT
Number of terminals	3	3
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Number of components	1	1
transistor applications	POWER CONTROL	POWER CONTROL
Transistor component materials	SILICON	SILICON

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