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BUP314S

Description
25 A, 1200 V, N-CHANNEL IGBT
CategoryDiscrete semiconductor    The transistor   
File Size59KB,7 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BUP314S Overview

25 A, 1200 V, N-CHANNEL IGBT

BUP314S Parametric

Parameter NameAttribute value
MakerSIEMENS
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
Is SamacsysN
Other featuresHIGH SWITCHING SPEED
Maximum collector current (IC)25 A
Collector-emitter maximum voltage1200 V
ConfigurationSINGLE
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)490 ns
Nominal on time (ton)125 ns
Base Number Matches1
BUP 314S
Preliminary data
IGBT
• High switching speed
• Very low switching losses
• Low tail current
• Latch-up free
• Avalanche rated
Pin 1
G
Type
BUP 314S
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
Symbol
Values
1200
1200
Unit
V
Pin 2
C
Ordering Code
C67040-A4207-A2
Pin 3
E
V
CE
I
C
Package
TO-218 AB
1200V 25A
V
CE
V
CGR
V
GE
I
C
R
GE
= 20 kΩ
Gate-emitter voltage
DC collector current
± 20
A
25
17
T
C
= 25 °C
T
C
= 90 °C
Pulsed collector current,
t
p
= 1 ms
I
Cpuls
50
34
T
C
= 25 °C
T
C
= 90 °C
Avalanche energy, single pulse
E
AS
65
mJ
I
C
= 25 A,
V
CC
= 50 V,
R
GE
= 25
L
= 200 µH,
T
j
= 25 °C
Power dissipation
P
tot
300
W
-55 ... + 150
-55 ... + 150
°C
T
C
= 25 °C
Chip or operating temperature
Storage temperature
T
j
T
stg
Semiconductor Group
1
Feb-07-1997

BUP314S Related Products

BUP314S C67040-A4207-A2
Description 25 A, 1200 V, N-CHANNEL IGBT 25 A, 1200 V, N-CHANNEL IGBT
Number of components 1 1
Number of terminals 3 3
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications POWER CONTROL POWER CONTROL
Transistor component materials SILICON SILICON
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