512kx8-Bit Dynamic RAM
HYB 514800BJ -60/-70/-80
Advanced Information
•
•
•
512 288 words by 8-bit organization
0 to 70 ˚C operating temperature
Fast access and cycle time
RAS access time:
60 ns (-60 version)
70 ns (-70 version)
80 ns (-80 version)
CAS access time:
20 ns
Cycle time:
110 ns (-60 version)
130 ns (-70 version)
150 ns (-80 version)
Fast page mode cycle time
45 ns (-60 version)
45 ns (-70 version)
50 ns (-80 version)
Single + 5 V (± 10 %) supply with a
built-in
V
bb
generator
•
Low power dissipation
max. 605 mW active (-60 version)
max. 550 mW active (-70 version)
max. 468 mW active (-80 version)
Standby power dissipation:
11 mW standby standby (TTL)
5.5 mW max.standby (CMOS)
Output unlatched at cycle end allows two-
dimensional chip selection
Read, write, read-modify write, CAS-before-
RAS refresh, RAS-only refresh, hidden
refresh, fast page mode capability
All inputs and outputs TTL-compatible
1024 refresh cycles / 16 ms
Plastic Packages: P-SOJ-28-2 400 mil width
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Ordering Information
Type
HYB 514800BJ-60
HYB 514800BJ-70
HYB 514800BJ-80
Ordering Code
Q67100-Q849
Q67100-Q850
Q67100-Q851
Package
P-SOJ-28-2
P-SOJ-28-2
P-SOJ-28-2
Descriptions
DRAM
(access time 60 ns)
DRAM
(access time 70 ns)
DRAM
(access time 80 ns)
Semiconductor Group
125
01.95
HYB 514800BJ -60/-70/-80
512k x 8 DRAM
The HYB 514800BJ is the new generation dynamic RAM organized as 512 288 words by 8-bit. The
HYB 514800BJ utilizes CMOS silicon gate process as well as advances circuit techniques to
provide wide operation margins, both internally and for the system user. Multiplexed address inputs
permit the HYB 514800BJ to be packed in a standard plastic 400mil wide P-SOPJ-28 package. This
package size provides high system bit densities and is compatible with commonly used automatic
testing and insertion equipment. System oriented feature include single + 5 V (± 10 %) power
supply, direct interfacing with high performance logic device families such as Schottky TTL.
Pin Definitions and Functions
A0-A8,A9R
RAS
CAS
WRITE
OE
IO1
-
IO8
N.C.
Address Input
Row Address Strobe
Column Address Strobe
Read/Write Input
Output Enable
Data Input/Output
No Connection
Power Supply (+ 5 V)
Ground (0 V)
V
CC
V
SS
Pin Configuration
(top view)
P-SOJ-28-2 ( 400 mil width)
Semiconductor Group
126
HYB 514800BJ -60/-70/-80
512k x 8 DRAM
Block Diagram
Semiconductor Group
127
HYB 514800BJ -60/-70/-80
512k x 8 DRAM
Absolute Maximum Ratings
Operating temperature range ............................................................................................0 to 70 ˚C
Storage temperature range......................................................................................– 55 to + 150 ˚C
Soldering temperature ............................................................................................................260 ˚C
Soldering time .............................................................................................................................10 s
Input/output voltage ........................................................................................................ – 1 to + 7 V
Power Supply voltage ..................................................................................................... – 1 to + 7 V
Data out current (short circuit) ................................................................................................ 50 mA
Note:
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
T
A
= 0 to 70 ˚C,
V
SS
= 0 V,
V
CC
= 5 V
±
10 %,
t
T
= 5 ns
Parameter
Input high voltage
Input low voltage
Output high voltage (
I
OUT
= – 5 mA)
Output low voltage (
I
OUT
= 4.2 mA)
Input leakage current, any input
(0 V <
V
in
< 7, all other input = 0 V)
Output leakage current
(DO is disabled, 0 <
V
OUT
<
V
CC
)
Average
V
CC
supply current
-60 version
-70 version
-80 version
Standby
V
CC
supply current
(RAS = CAS =
V
ih
)
Average
V
CC
supply current during RAS-only
refresh cycles
-60 version
-70 version
-80 version
Average
V
CC
supply current during fast page
mode operation
-60 version
-70 version
-80 version
Symbol
Limit Values
min.
max.
6.5
0.8
–
0.4
10
10
2.4
– 1.0
2.4
–
– 10
– 10
Unit Test
Condition
V
V
V
V
µA
µA
mA
–
–
–
110
100
90
2
mA
mA
–
–
–
110
100
90
mA
–
–
–
70
60
50
2) 3)
1)
1)
1)
1)
1)
V
ih
V
il
V
oh
V
ol
I
I(L)
I
o(L)
I
CC1
1)
2) 3)
I
CC2
I
CC3
–
–
2)
I
CC4
Semiconductor Group
128
HYB 514800BJ -60/-70/-80
512k x 8 DRAM
DC Characteristics
(cont’d)
T
A
= 0 to 70 ˚C,
V
SS
= 0 V,
V
CC
= 5 V
±
10 %,
t
T
= 5 ns
Parameter
Standby
V
CC
supply current
(RAS = CAS =
V
CC
– 0.2 V)
Average
V
CC
supply current during
CAS before RAS refresh mode
-60 version
-70 version
-80 version
Symbol
Limit Values
min.
max.
1
–
Unit Test
Condition
mA
mA
–
–
–
110
100
90
1)
I
CC5
I
CC6
2)
Semiconductor Group
129
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