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C67078-A5100-A3

Description
POWER, FET
Categorysemiconductor    Discrete semiconductor   
File Size331KB,9 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

C67078-A5100-A3 Overview

POWER, FET

C67078-A5100-A3 Parametric

Parameter NameAttribute value
stateACTIVE
Transistor typeGENERAL PURPOSE POWER
TEMPFET
®
BTS 240A
Features
q
q
q
q
N channel
Enhancement mode
Temperature sensor with thyristor characteristic
The drain pin is electrically shorted to the tab
1
2
3
Pin
1
G
2
D
3
S
Type
BTS 240A
V
DS
50 V
I
D
58 A
R
DS(on)
0.018
Package
TO-218AA
Ordering Code
C67078-A5100-A3
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage,
R
GS
= 20 kΩ
Gate-source voltage
Continuous drain current,
T
C
= 73
°C
ISO drain current
T
C
= 85 ˚C,
V
GS
= 10 V,
V
DS
= 0.5 V
Pulsed drain current,
Short circuit current,
Symbol
Values
50
50
±
20
58
21.0
232
147
2200
170
– 55 ... + 150
E
55/150/56
K/W
0.74
45
°C
W
A
Unit
V
V
DS
V
DGR
V
GS
I
D
I
D-ISO
I
D puls
I
SC
P
SCmax
P
tot
T
j
,
T
stg
T
C
= 25
°C
T
j
= – 55 ... + 150
°C
Short circuit dissipation,
T
j
= – 55 ... + 150
°C
Power dissipation
Operating and storage temperature range
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Thermal resistance
Chip-case
Chip-ambient
R
th JC
R
th JA
Semiconductor Group
1
04.97

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