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BTS240A

Description
POWER, FET
CategoryDiscrete semiconductor    The transistor   
File Size331KB,9 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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BTS240A Overview

POWER, FET

BTS240A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSIEMENS
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Is SamacsysN
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
Minimum drain-source breakdown voltage50 V
Maximum drain current (ID)58 A
Maximum drain-source on-resistance0.018 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.8 pF
JEDEC-95 codeTO-218AA
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment170 W
Maximum pulsed drain current (IDM)232 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)890 ns
Maximum opening time (tons)305 ns
Base Number Matches1
TEMPFET
®
BTS 240A
Features
q
q
q
q
N channel
Enhancement mode
Temperature sensor with thyristor characteristic
The drain pin is electrically shorted to the tab
1
2
3
Pin
1
G
2
D
3
S
Type
BTS 240A
V
DS
50 V
I
D
58 A
R
DS(on)
0.018
Package
TO-218AA
Ordering Code
C67078-A5100-A3
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage,
R
GS
= 20 kΩ
Gate-source voltage
Continuous drain current,
T
C
= 73
°C
ISO drain current
T
C
= 85 ˚C,
V
GS
= 10 V,
V
DS
= 0.5 V
Pulsed drain current,
Short circuit current,
Symbol
Values
50
50
±
20
58
21.0
232
147
2200
170
– 55 ... + 150
E
55/150/56
K/W
0.74
45
°C
W
A
Unit
V
V
DS
V
DGR
V
GS
I
D
I
D-ISO
I
D puls
I
SC
P
SCmax
P
tot
T
j
,
T
stg
T
C
= 25
°C
T
j
= – 55 ... + 150
°C
Short circuit dissipation,
T
j
= – 55 ... + 150
°C
Power dissipation
Operating and storage temperature range
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Thermal resistance
Chip-case
Chip-ambient
R
th JC
R
th JA
Semiconductor Group
1
04.97

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