1M x 32-Bit Dynamic RAM Module
(2M x 16-Bit Dynamic RAM Module)
HYM 321160S/GS-60/-70
Advanced Information
•
1 048 576 words by 32-bit organization
(alternative 2 097 152 words by 16-bit)
Fast access and cycle time
60 ns access time
110 ns cycle time (-60 version)
70 ns access time
130 ns cycle time (-70 version)
Fast page mode capability with
40 ns cycle time (-60 version)
45 ns cycle time (-70 version)
Single + 5 V (± 10 %) supply
Low power dissipation
max. 4840 mW active (-60 version)
max. 4400 mW active (-70 version)
CMOS – 44 mW standby
TTL
– 88 mW standby
•
CAS-before-RAS refresh, RAS-only-refresh,
Hidden refresh
8 decoupling
substrate
capacitors
mounted
on
•
•
•
All inputs, outputs and clock fully TTL
compatible
72 pin Single in-Line Memory Module
Utilizes eight 1M
×
4-DRAMs in 300 mil SOJ
packages
1024 refresh cycles /16 ms
Tin-Lead contact pads (S - version)
Gold contact pads (GS - version)
single sided module with 25.4 mm (1000 mil)
height
•
•
•
•
•
•
•
•
•
Ordering Information
Type
HYM 321160S-60
HYM 321160S-70
HYM 321160GS-60
HYM 321160GS-70
Ordering Code
Q67100-Q2010
on request
Q67100-Q2009
on request
Package
L-SIM-72-11
L-SIM-72-11
L-SIM-72-11
L-SIM-72-11
Descriptions
DRAM module
(access time 60 ns)
DRAM module
(access time 70 ns)
DRAM module
(access time 60 ns)
DRAM module
(access time 70 ns)
Semiconductor Group
541
09.94
HYM 321160S/GS-60/-70
1M x 32-Bit
The HYM 321160S/GS-60/-70 is a 4 M Byte DRAM module organized as 1 048 576 words by
32-bit in a 72-pin single-in-line package comprising eight HYB 514400BJ 1M
×
4 DRAMs in 300 mil
wide SOJ-packages mounted together with eight 0.2
µF
ceramic decoupling capacitors on a PC
board.
The HYM 321160S/GS-60/-70 can also be used as a 2 097 152 words by 16-bits dynamic RAM
module by means of connecting DQ0 and DQ16, DQ1 and DQ17, DQ2 and DQ18, …, DQ15 and
DQ31, respectively.
Each HYB 514400BJ is described in the data sheet and is fully electrically tested and processed
according to Siemens standard quality procedure prior to module assembly. After assembly onto
the board, a further set of electrical tests is performed.
The speed of the module can be detected by the use of four presence detect pins.
The common I/O feature on the HYM 321160S/GS-60/-70 dictates the use of early write cycles.
Pin Definitions and Functions
Pin No.
A0-A9
DQ0-DQ31
CAS0 - CAS3
RAS0, RAS2
WE
Function
Address Inputs
Data Input/Output
Column Address Strobe
Row Address Strobe
Read/Write Input
Power (+ 5 V)
Ground
Presence Detect Pin
No Connection
V
CC
V
SS
PD
N.C.
Presence Detect Pins
-60
PD0
PD1
PD2
PD3
-70
V
SS
V
SS
N.C.
N.C.
V
SS
V
SS
V
SS
N.C.
Semiconductor Group
542
HYM 321160S/GS-60/-70
1M x 32-Bit
Pin Configuration
(top view)
Semiconductor Group
543
HYM 321160S/GS-60/-70
1M x 32-Bit
Block Diagram
Semiconductor Group
544
HYM 321160S/GS-60/-70
1M x 32-Bit
Absolute Maximum Ratings
Operating temperature range ......................................................................................... 0 to + 70 ˚C
Storage temperature range...................................................................................... – 55 to + 125 ˚C
Soldering temperature ............................................................................................................ 260 ˚C
Soldering time ............................................................................................................................. 10 s
Input/output voltage ........................................................................................................ – 1 to + 7 V
Power supply voltage...................................................................................................... – 1 to + 7 V
Power dissipation................................................................................................................... 6.16 W
Data out current (short circuit) ................................................................................................ 50 mA
Note:
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
1)
T
A
= 0 to 70 ˚C;
V
CC
= 5 V
±
10 %
Parameter
Input high voltage
Input low voltage
Output high voltage (
I
OUT
= – 5 mA)
Output low voltage (
I
OUT
= 4.2 mA)
Input leakage current
(0 V <
V
IN
< 6.5 V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V <
V
OUT
< 5.5 V)
Average
V
CC
supply current:
-60 version
-70 version
(RAS, CAS, address cycling,
t
RC
=
t
RC
min.)
Standby
V
CC
supply current
(RAS = CAS =
V
IH
)
Symbol
Limit Values
min.
max.
5.5
0.8
–
0.4
20
10
V
V
V
V
µA
µA
2.4
– 1.0
2.4
–
– 20
– 10
Unit
Test
Condition
–
–
–
–
–
–
V
IH
V
IL
V
OH
V
OL
I
I(L)
I
O(L)
I
CC1
–
–
880
800
mA
mA
2), 3)
I
CC2
–
16
mA
–
Average
V
CC
supply current during RAS
I
CC3
only refresh cycles:
-60 version
-70 version
(RAS cycling, CAS =
V
IH
, t
RC
=
t
RC
min.)
2)
–
–
880
800
mA
mA
Semiconductor Group
545
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