PROFET® Data Sheet BTS550P
Smart Highside High Current Power Switch
Reversave
•
Reverse battery protection by self turn on of
power MOSFET
•
Overload protection
•
Current limitation
•
Short circuit protection
•
Overtemperature protection
•
Overvoltage protection (including load dump)
•
Clamp of negative voltage at output
•
Fast deenergizing of inductive loads
1)
•
Low ohmic inverse current operation
•
Diagnostic feedback with load current sense
•
Open load detection via current sense
•
Loss of
V
bb
protection
2)
•
Electrostatic discharge
(ESD) protection
Features
Product Summary
Overvoltage protection
Output clamp
Operating voltage
On-state resistance
Load current (ISO)
Short circuit current limitation
Current sense ratio
V
bb(AZ)
62
V
ON(CL)
44
V
bb(on)
5.0 ... 34
R
ON
I
L(ISO)
I
L(SC)
I
L :
I
IS
V
V
V
3.6
mΩ
115
A
220
A
21000
TO-218AB/5
•
Power switch with current sense diagnostic
feedback for 12 V and 24 V DC grounded loads
•
Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and
inductive loads
•
Replaces electromechanical relays, fuses and discrete circuits
Application
5
1
Straight leads
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.
3 & Tab
Voltage
source
Overvoltage
protection
Current
limit
Gate
protection
OUT
R bb
+ V bb
1, 5
I
L
Voltage
sensor
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Output
Voltage
detection
Current
Sense
Load
2
IN
ESD
Logic
I
IN
Temperature
sensor
I
IS
IS
PROFET
Load GND
V
IN
V
IS
Logic GND
4
R
IS
1
)
2)
With additional external diode.
Additional external diode required for energized inductive loads (see page 9).
Infineon Technologies AG
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2003-Oct-01
Data Sheet BTS550P
Pin
1
2
3
Symbol
OUT
IN
Vbb
O
I
Function
Output to the load. The pins 1 and 5 must be shorted with each other
especially in high current applications!
3)
Input, activates the power switch in case of short to ground
Positive power supply voltage, the tab is electrically connected to this pin.
In high current applications the tab should be used for the V
bb
connection
instead of this pin
4)
.
Diagnostic feedback providing a sense current proportional to the load
current; zero current on failure (see Truth Table on page 7)
Output to the load. The pins 1 and 5 must be shorted with each other
especially in high current applications!
3)
+
4
5
IS
OUT
S
O
Maximum Ratings
at
T
j
= 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 4)
Supply voltage for short circuit protection,
T
j,start
=-40 ...+150°C:
(E
AS
limitation see diagram on page 9)
Load current (short circuit current, see page 5)
Load dump protection
V
LoadDump
=
U
A
+
V
s
,
U
A
= 13.5 V
R
I
5
)
= 2
Ω,
R
L
= 0.54
Ω,
t
d
= 200 ms,
IN, IS = open or grounded
Operating temperature range
Storage temperature range
Power dissipation (DC), T
C
≤
25 °C
Inductive load switch-off energy dissipation, single pulse
V
bb
= 12V,
T
j,start
= 150°C,
T
C
= 150°C const.,
I
L
= 20 A, Z
L
= 15 mH, 0
Ω,
see diagrams on page 10
Electrostatic discharge capability (ESD)
Human Body Model acc. MIL-STD883D, method 3015.7 and ESD
assn. std. S5.1-1993, C = 100 pF, R = 1.5 kΩ
Symbol
V
bb
V
bb
I
L
V
Load dump6
)
T
j
T
stg
P
tot
E
AS
V
ESD
I
IN
I
IS
Values
40
34
self-limited
80
-40 ...+150
-55 ...+150
360
3
4
+15 , -250
+15 , -250
Unit
V
V
A
V
°C
W
J
kV
mA
Current through input pin (DC)
Current through current sense status pin (DC)
see internal circuit diagrams on page 8
3)
4)
5)
6)
Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability
and decrease the current sense accuracy
Otherwise add up to 0.5 mΩ (depending on used length of the pin) to the R
ON
if the pin is used instead of the
tab.
R
I
= internal resistance of the load dump test pulse generator.
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839.
Infineon Technologies AG
2
2003-Oct-01
Data Sheet BTS550P
Thermal Characteristics
Parameter and Conditions
Thermal resistance
Symbol
chip - case
:
R
thJC7
)
Junction - ambient (free air):
R
thJA
Values
min
typ
max
--
-- 0.35
30
--
--
Unit
K/W
Electrical Characteristics
Parameter and Conditions
at
T
j
= -40 ... +150 °C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
On-state resistance
(Tab to pins 1,5, see measurement
circuit page 8)
I
L
= 20 A,
T
j
= 25 °C:
R
ON
V
IN
= 0,
I
L
= 20 A
,
T
j
= 150 °C:
I
L
= 120 A
,
T
j
= 150 °C:
V
bb
= 6V
8
)
,
I
L
= 20 A
,
T
j
= 150 °C:
Nominal load current
9
) (Tab to pins 1,5)
ISO 10483-1/6.7:
V
ON
= 0.5 V,
T
c = 85 °C
10
)
Maximum load current in resistive range
(Tab to pins 1,5)
V
ON
= 1.8 V,
T
c = 25 °C:
see diagram on page 12
V
ON
= 1.8 V,
T
c = 150 °C:
Turn-on time
11
)
IIN
to 90%
V
OUT
:
Turn-off time
IIN
to 10%
V
OUT
:
R
L
= 1
Ω
,
T
j
=-40...+150°C
Slew rate on
11)
(10 to 30%
V
OUT
)
R
L
= 1
Ω
,T
j
=25°C
Slew rate off
11)
(70 to 40%
V
OUT
)
R
L
= 1
Ω
,T
j
=25°C
R
ON(Static)
I
L(ISO)
--
--
90
2.8
5.0
--
7
115
3.6
6.5
6.5
10
--
mΩ
A
I
L(Max)
t
on
t
off
dV/dt
on
-dV/dt
off
390
215
120
40
0.2
0.2
--
--
250
90
0.5
0.6
--
--
600
150
0.8
1
A
µs
V/µs
V/µs
7)
Thermal resistance R
thCH
case to heatsink (about 0.25 K/W with silicone paste) not included!
8
) Decrease of V below 10 V causes a slowly a dynamic increase of R
bb
ON
to a higher value of R
ON(Static)
. As
long as V
bIN
> V
bIN(u) max
, R
ON
increase is less than 10 % per second for T
J
< 85 °C.
9)
not subject to production test, specified by design
10)
T
is about 105°C under these conditions.
J
11
) See timing diagram on page 13.
Infineon Technologies AG
3
2003-Oct-01
Data Sheet BTS550P
Parameter and Conditions
at
T
j
= -40 ... +150 °C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Inverse Load Current Operation
On-state resistance
(Pins 1,5 to pin 3)
V
bIN
= 12 V,
I
L
= - 20 A
T
j
= 25 °C:
R
ON(inv)
see diagram on page 10
T
j
= 150 °C:
Nominal inverse load current
(Pins 1,5 to Tab)
I
L(inv)
V
ON
= -0.5 V,
T
c = 85 °C
10
-V
ON
Drain-source diode voltage
(V
out
> V
bb
)
I
L
= - 20 A,
I
IN
= 0,
T
j
= +150°C
Operating Parameters
Operating voltage (V
IN
= 0)
8, 12
)
Undervoltage shutdown
13
)
Undervoltage start of charge pump
see diagram page
14
Overvoltage protection
14
)
T
j
=-40°C:
I
bb
= 15 mA
T
j
= 25...+150°C:
Standby current
T
j
=-40...+25°C:
I
IN
= 0
T
j
= 150°C:
V
bb(on)
V
bIN(u)
V
bIN(ucp)
V
bIN(Z)
I
bb(off)
--
90
--
2.8
5.0
115
0.6
3.6
6.5
--
0.7
mΩ
A
V
5.0
1.5
3.0
60
62
--
--
--
3.0
4.5
--
64
15
25
34
4.5
6.0
--
--
25
50
V
V
V
V
µA
12
)
If the device is turned on before a V
bb
-decrease, the operating voltage range is extended down to
V
bIN(u)
.
For the voltage range 0..34 V the device is fully protected against overtemperature and short circuit.
13
) V
bIN
= V
bb
- V
IN
see diagram on page 8. When
V
bIN
increases from less than V
bIN(u)
up to
V
bIN(ucp)
= 5 V
(typ.) the charge pump is not active and
V
OUT
≈V
bb
- 3 V.
14)
See also
V
ON(CL)
in circuit diagram on page 9.
Infineon Technologies AG
4
2003-Oct-01
Data Sheet BTS550P
Parameter and Conditions
at
T
j
= -40 ... +150 °C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Protection Functions
15
)
Short circuit current limit
(Tab to pins 1,5)
16
V
ON
= 12 V, time until shutdown max. 350
µs
T
c
=-40°C:
I
L(SCp)
T
c
=25°C:
T
c
=+150°C:
Short circuit shutdown delay after input current
positive slope,
V
ON
>
V
ON(SC)
t
d(SC)
min. value valid only if input "off-signal" time exceeds 30
µs
100
110
120
80
14
40
--
150
--
190
220
210
--
17
44
6
--
10
350
330
310
350
20
47
--
--
--
A
µs
V
V
V
°C
K
Output clamp
17
)
I
L
= 40 mA: -V
OUT(CL)
(inductive load switch off)
Output clamp (inductive load switch off)
at
V
OUT
=
V
bb
-
V
ON(CL)
(e.g. overvoltage)
V
ON(CL)
I
L
= 40 mA
Short circuit shutdown detection voltage
(pin 3 to pins 1,5)
V
ON(SC)
Thermal overload trip temperature
T
jt
Thermal hysteresis
∆
T
jt
Reverse Battery
Reverse battery voltage
18
)
-V
bb
On-state resistance
(Pins 1,5 to pin 3)
T
j
= 25 °C:
R
ON(rev)
V
bb
= -12V,
V
IN
= 0,
I
L
= - 20 A,
R
IS
= 1 kΩ
T
j
= 150 °C:
Integrated resistor in V
bb
line
T
j
=25°C:
T
j
=150°C:
R
bb
--
--
90
105
--
3.4
--
110
125
32
4.3
7.5
135
150
V
mΩ
Ω
15
)
16
)
17
)
18
)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not
designed for continuous repetitive operation.
Short circuit is a failure mode. The device is not designed to operate continuously into a short circuit by
permanent resetting the short circuit latch function. The lifetime will be reduced under such conditions.
This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 8). If the diode
is used, V
OUT
is clamped to V
bb
- V
ON(CL)
at inductive load switch off.
The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as
it is done with all polarity symmetric loads). Note that under off-conditions (I
IN
=
I
IS
= 0) the power transistor
is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic
drain-source diode. The temperature protection is not active during reverse current operation! Increasing
reverse battery voltage capability is simply possible as described on page 9.
Infineon Technologies AG
5
2003-Oct-01
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