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CA2832C

Description
35.5 dB 1-200 MHz 1.6 WATT WIDEBAND LINEAR AMPLIFIER
CategoryWireless rf/communication    Radio frequency and microwave   
File Size62KB,4 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

CA2832C Overview

35.5 dB 1-200 MHz 1.6 WATT WIDEBAND LINEAR AMPLIFIER

CA2832C Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionSOT-115J
Reach Compliance Codeunknow
Other featuresHIGH RELIABILITY
Characteristic impedance50 Ω
structureMODULE
Gain34 dB
Maximum input power (CW)5 dBm
Maximum operating frequency200 MHz
Minimum operating frequency1 MHz
Maximum operating temperature90 °C
Minimum operating temperature-20 °C
Package body materialPLASTIC/EPOXY
Encapsulate equivalent codeSOT-115J
power supply28 V
RF/Microwave Device TypesWIDE BAND MEDIUM POWER
technologyHYBRID
Maximum voltage standing wave ratio2
MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document
by CA2832C/D
Wideband Linear Amplifier
. . . designed for amplifier applications in 50 to 100 ohm systems requiring wide
bandwidth, low noise and low distortion. This hybrid provides excellent gain
stability with temperature and linear amplification as a result of the push–pull
circuit design.
Specified Characteristics at VCC = 28 V, TC = 25°C:
Frequency Range — 1 to 200 MHz
Output Power — 1580 mW Typ @ 1 dB Compression, f = 200 MHz
Power Gain — 35.5 dB Typ @ f = 100 MHz
PEP — 900 mW Typ @ – 32 dB IMD
Noise Figure — 5 dB Typ @ f = 200 MHz
ITO — 47 dBm @ f = 200 MHz
All Gold Metallization for Improved Reliability
Unconditional Stability Under All Load Conditions
CA2832C
35.5 dB
1 – 200 MHz
1.6 WATT
WIDEBAND
LINEAR AMPLIFIER
MAXIMUM RATINGS
Rating
DC Supply Voltage
RF Power Input
Operating Case Temperature Range
Storage Temperature Range
Symbol
VCC
Pin
TC
Tstg
Value
30
+5
– 20 to + 90
– 40 to +100
Unit
Vdc
dBm
°C
°C
CASE 714F–03, STYLE 1
[CA (POS. SUPPLY)]
ELECTRICAL CHARACTERISTICS
(TC = 25°C, VCC = 28 V, 50
system unless otherwise noted)
Characteristic
Frequency Range
Gain Flatness (f = 1– 200 MHz)
Power Gain (f = 100 MHz)
Noise Figure, Broadband (f = 200 MHz)
Power Output — 1 dB Compression (f = 1– 200 MHz)
Power Output — 1 dB Compression (f = 150 MHz)
Third Order Intercept (See Figure 10, f1 = 200 MHz)
Input/Output VSWR (f = 1– 200 MHz)
Second Harmonic Distortion (Po = 100 mW, f2H = 150 MHz)
Peak Envelope Power (Two Tone Distortion Test — See Figure 10)
(f = 1 – 200 MHz @ – 32 dB IMD)
Supply Current
Symbol
BW
PG
NF
Po 1dB
Po 1dB
ITO
VSWR
dso
PEP
ICC
Min
1
34
1260
45
400
Typ
±
0.5
35.5
5
1580
2000
47
1.5:1
– 70
900
435
Max
200
±1
37
6
2:1
– 60
470
Unit
MHz
dB
dB
dB
mW
mW
dBm
dB
mW
mA
©
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
CA2832C
1

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