PNP Silicon Transistor
q
For AF input stages and driver applications
q
High current gain
q
Low collector-emitter saturation voltage
SMBTA 70
Type
SMBTA 70
Marking
s2C
Ordering Code
(tape and reel)
Q62702-M0003
Pin Configuration
1
2
3
B
E
C
Package
1)
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Peak base current
Total power dissipation,
T
S
= 71 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
2)
Junction - soldering point
R
th JA
R
th JS
≤
310
≤
240
Symbol
V
CE0
V
EB0
I
C
I
CM
I
BM
P
tot
T
j
T
stg
Values
40
4
100
200
100
330
150
– 65 … + 150
Unit
V
mA
mW
˚C
K/W
1)
2)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm
×
40 mm
×
1.5 mm/6 cm
2
Cu.
Semiconductor Group
1
5.91
SMBTA 70
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA
Emitter-base breakdown voltage
I
E
= 100
µ
A
Collector-base cutoff current
V
CB
= 30 V,
I
E
= 0
V
CB
= 30 V,
I
E
= 0,
T
A
= 150 ˚C
Emitter-base cutoff current
V
EB
= 4 V,
I
C
= 0
DC current gain
I
C
= 5 mA,
V
CE
= 10 V
Collector-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 1 mA
AC characteristics
Transition frequency
I
C
= 5 mA,
V
CE
= 10 V,
f
= 100 MHz
Output capacitance
V
CB
= 10 V,
f
= 1 MHz
f
T
C
obo
125
–
–
–
–
4
MHz
pF
V
(BR)CE0
V
(BR)EB0
I
CB0
–
–
I
EB0
h
FE
V
CEsat
–
40
–
–
–
–
–
–
100
20
20
400
0.25
nA
µ
A
nA
–
V
40
4
–
–
–
–
V
Values
typ.
max.
Unit
1)
Pulse test conditions:
t
≤
300
µ
s,
D
≤
2 %.
Semiconductor Group
2
SMBTA 70
Total power dissipation
P
tot
=
f
(T
A
*;
T
S
)
* Package mounted on epoxy
Permissible pulse load
P
tot max
/P
tot DC
=
f
(t
p
)
Transition frequency
f
T
=
f
(I
C
)
V
CE
= 5 V
Base-emitter saturation voltage
V
BE sat
=
f
(I
C
),
h
FE
= 40
Semiconductor Group
3
SMBTA 70
Collector-emitter saturation voltage
I
C
=
f
(V
CE sat
),
h
FE
= 40
Collector current
I
C
=
f
(V
BE
)
V
CE
= 1 V
DC current gain
h
FE
=
f
(I
C
)
V
CE
= 1 V
Semiconductor Group
4
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