EEWORLDEEWORLDEEWORLD

Part Number

Search

Q62702-F1575

Description
NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems)
File Size63KB,7 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Compare View All

Q62702-F1575 Overview

NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems)

BFP 136W
NPN Silicon RF Transistor
• For power amplifier in DECT and PCN systems
• f
T
= 5.5GHz
• Gold metalization for high reliability
ESD: Electrostatic discharge
sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFP 136W
PAs
Q62702-F1575
1=E
2=C
3=E
4=B
Package
SOT-343
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Symbol
Values
12
20
20
2
150
20
mW
1000
150
- 65 ... + 150
- 65 ... + 150
90
°C
mA
Unit
V
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
1)
T
S
60 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
R
thJS
K/W
1)
T
S
is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Jan-20-1997

Q62702-F1575 Related Products

Q62702-F1575 BFP136 BFP136W
Description NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems) NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems) NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems)

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2291  2710  2257  2546  708  47  55  46  52  15 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号