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BFP136

Description
NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems)
File Size63KB,7 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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BFP136 Overview

NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems)

BFP 136W
NPN Silicon RF Transistor
• For power amplifier in DECT and PCN systems
• f
T
= 5.5GHz
• Gold metalization for high reliability
ESD: Electrostatic discharge
sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFP 136W
PAs
Q62702-F1575
1=E
2=C
3=E
4=B
Package
SOT-343
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Symbol
Values
12
20
20
2
150
20
mW
1000
150
- 65 ... + 150
- 65 ... + 150
90
°C
mA
Unit
V
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
1)
T
S
60 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
R
thJS
K/W
1)
T
S
is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Jan-20-1997

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BFP136 BFP136W Q62702-F1575
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