PNP Silicon High-Voltage Transistors
BFN 37
BFN 39
q
Suitable for video output stages in TV sets
and switching power supplies
q
High breakdown voltage
q
Low collector-emitter saturation voltage
q
Complementary types: BFN 36, BFN 38 (NPN)
Type
BFN 37
BFN 39
Marking
BFN 37
BFN 39
Ordering Code
(tape and reel)
Q62702-F1304
Q62702-F1305
Pin Configuration
1
2
3
4
B
C
E
C
Package
1)
SOT-223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation,
T
S
= 124 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
2)
Junction - soldering point
R
th JA
R
th JS
≤
72
≤
17
Symbol
V
CE0
V
CB0
V
EB0
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Values
BFN 39
BFN 37
250
250
5
200
500
100
200
1.5
150
– 65 … + 150
300
300
Unit
V
mA
W
˚C
K/W
1)
2)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm
×
40 mm
×
1.5 mm/6 cm
2
Cu.
Semiconductor Group
1
5.91
BFN 37
BFN 39
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
BFN 37
BFN 39
Collector-base breakdown voltage
I
C
= 100
µ
A,
I
B
= 0
BFN 37
BFN 39
Emitter-base breakdown voltage
I
E
= 100
µ
A,
I
B
= 0
Collector-base cutoff current
V
CB
= 200 V
V
CB
= 250 V
V
CB
= 200 V,
T
A
= 150 ˚C
V
CB
= 250 V,
T
A
= 150 ˚C
Emitter-base cutoff current
V
EB
= 4 V,
I
C
= 0
DC current gain
1)
I
C
= 1 mA,
V
CE
= 10 V
I
C
= 10 mA,
V
CE
= 10 V
I
C
= 30 mA,
V
CE
= 10 V
I
C
= 30 mA,
V
CE
= 10 V
BFN 37
BFN 39
BFN 37
BFN 39
I
EB0
h
FE
25
40
40
30
V
CEsat
–
–
V
BEsat
–
–
–
–
0.4
0.5
0.9
–
–
–
–
–
–
–
–
V
V
(BR)CE0
250
300
V
(BR)CB0
250
300
V
(BR)EB0
I
CB0
–
–
–
–
–
–
–
–
–
–
100
100
20
20
100
nA
nA
µ
A
µ
A
nA
–
5
–
–
–
–
–
–
–
–
–
–
V
Values
typ.
max.
Unit
BFN 37
BFN 39
Collector-emitter saturation voltage
1)
I
C
= 20 mA,
I
B
= 2 mA
BFN 37
BFN 39
Base-emitter saturation voltage
1)
I
C
= 20 mA,
I
B
= 2 mA
AC characteristics
Transition frequency
I
C
= 20 mA,
V
CE
= 10 V,
f
= 100 MHz
Output capacitance
V
CB
= 30 V,
f
= 1 MHz
f
T
C
obo
–
–
100
0
2.5
–
–
MHz
pF
1)
Pulse test conditions:
t
≤
300
µ
s,
D
= 2 %.
Semiconductor Group
2
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