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Q62702-C2136

Description
NPN Silicon Darlington Transistors (For general AF applications High collector current High current gain)
File Size153KB,5 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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Q62702-C2136 Overview

NPN Silicon Darlington Transistors (For general AF applications High collector current High current gain)

NPN Silicon Darlington Transistors
BCP 29
BCP 49
q
For general AF applications
q
High collector current
q
High current gain
q
Complementary types: BCP 28/48 (PNP)
Type
BCP 29
BCP 49
Marking
BCP 29
BCP 49
Ordering Code
(tape and reel)
Q62702-C2136
Q62702-C2137
Pin Configuration
Package
1)
SOT-223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation,
T
S
= 124 ˚C
2)
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
2)
Junction - soldering point
1)
2)
Symbol
V
CE0
V
CB0
V
EB0
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Values
BCP 49
BCP 29
30
40
10
60
80
10
500
800
100
200
1.5
150
– 65 … + 150
Unit
V
mA
W
˚C
R
th JA
R
th JS
75
17
K/W
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm
×
40 mm
×
1.5 mm/6 cm
2
Cu.
Semiconductor Group
1
5.91

Q62702-C2136 Related Products

Q62702-C2136 BCP29 BCP49 Q62702-C2137
Description NPN Silicon Darlington Transistors (For general AF applications High collector current High current gain) NPN Silicon Darlington Transistors (For general AF applications High collector current High current gain) NPN Silicon Darlington Transistors (For general AF applications High collector current High current gain) NPN Silicon Darlington Transistors (For general AF applications High collector current High current gain)
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