NPN Silicon Darlington Transistors
BCP 29
BCP 49
q
For general AF applications
q
High collector current
q
High current gain
q
Complementary types: BCP 28/48 (PNP)
Type
BCP 29
BCP 49
Marking
BCP 29
BCP 49
Ordering Code
(tape and reel)
Q62702-C2136
Q62702-C2137
Pin Configuration
Package
1)
SOT-223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation,
T
S
= 124 ˚C
2)
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
2)
Junction - soldering point
1)
2)
Symbol
V
CE0
V
CB0
V
EB0
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Values
BCP 49
BCP 29
30
40
10
60
80
10
500
800
100
200
1.5
150
– 65 … + 150
Unit
V
mA
W
˚C
R
th JA
R
th JS
≤
75
≤
17
K/W
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm
×
40 mm
×
1.5 mm/6 cm
2
Cu.
Semiconductor Group
1
5.91
BCP 29
BCP 49
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
BCP 29
BCP 49
Collector-base breakdown voltage
I
C
= 100
µ
A,
I
B
= 0
BCP 29
BCP 49
Emitter-base breakdown voltage
I
E
= 10
µ
A,
I
C
= 0
Collector-base cutoff current
V
CB
= 30 V,
I
E
= 0
V
CB
= 60 V,
I
E
= 0
V
CB
= 30 V,
I
E
= 0,
T
A
= 150 ˚C
V
CB
= 60 V,
I
E
= 0,
T
A
= 150 ˚C
Emitter-base cutoff current
V
EB
= 4 V,
I
C
= 0
DC current gain
1)
I
C
= 100
µ
A,
V
CE
= 1 V
I
C
= 10 mA,
V
CE
= 5 V
I
C
= 100 mA,
V
CE
= 5 V
I
C
= 500 mA,
V
CE
= 5 V
Collector-emitter saturation voltage
I
C
= 100 mA,
I
B
= 0.1 mA
Base-emitter saturation voltage
I
C
= 100 mA,
I
B
= 0.1 mA
BCP 29
BCP 49
BCP 29
BCP 49
BCP 29
BCP 49
BCP 29
BCP 49
V
CEsat
V
BEsat
BCP 29
BCP 49
BCP 29
BCP 49
I
EB0
h
FE
4000
2000
10000
4000
20000
10000
4000
2000
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
1.0
1.5
V
V
(BR)EB0
I
CB0
–
–
–
–
–
–
–
–
–
–
100
100
10
10
100
nA
nA
µ
A
µ
A
nA
–
V
(BR)CE0
30
60
V
(BR)CB0
40
80
10
–
–
–
–
–
–
–
–
–
–
V
Values
typ.
max.
Unit
1)
Pulse test conditions:
t
≤
300
µ
s,
D
= 2 %.
Semiconductor Group
2
BCP 29
BCP 49
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
AC characteristics
Transition frequency
I
C
= 50 mA,
V
CE
= 5 V,
f
= 100 MHz
Output capacitance
V
CB
= 10 V,
f
= 1 MHz
f
T
C
obo
–
–
200
6.5
–
–
MHz
pF
Values
typ.
max.
Unit
Semiconductor Group
3
BCP 29
BCP 49
Total power dissipation
P
tot
=
f
(T
A
*;
T
S
)
* Package mounted on epoxy
Collector cutoff current
I
CB0
=
f
(T
A
)
V
CB
=
V
CE max
Transition frequency
f
T
=
f
(I
C
)
V
CE
= 5 V
Permissible pulse load
P
tot max
/P
tot DC
=
f
(t
p
)
Semiconductor Group
4
BCP 29
BCP 49
DC current gain
h
FE
=
f
(I
C
)
V
CE
= 10 V
Collector-emitter saturation voltage
I
C
=
f
(V
CEsat
)
h
FE
= 1000
Collector-base capacitance
C
CB0
=
f
(V
CB0
)
Emitter-base capacitance
C
EB0
=
f
(V
EB0
)
Base-emitter saturation voltage
I
C
=
f
(V
BEsat
)
h
FE
= 1000
Semiconductor Group
5
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