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5962-9561322HYX

Description
Standard SRAM, 512KX8, 25ns, CMOS, CDIP32, CERAMIC, DIP-32
Categorystorage    storage   
File Size226KB,43 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

5962-9561322HYX Overview

Standard SRAM, 512KX8, 25ns, CMOS, CDIP32, CERAMIC, DIP-32

5962-9561322HYX Parametric

Parameter NameAttribute value
Objectid1820276260
Parts packaging codeDIP
package instructionDIP,
Contacts32
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time25 ns
JESD-30 codeR-CDIP-T32
length42.2 mm
memory density4194304 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals32
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize512KX8
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDIP
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal formTHROUGH-HOLE
Terminal locationDUAL
REVISIONS
LTR
A
B
C
D
DESCRIPTION
Added device types 05 through 10. Added case outlines X, Z, and T.
Redrew entire document.
Added device types 11 through 13. Added case outline U.
Made changes in accordance with NOR 5962-R289-97. -sld
Table I; Changed the max limit for the operating supply current test
I
CC
for device types 05-10 from 130 mA to 135 mA. Table I; Changed
the max limit for data retention current (I
CCDR1
) for device types 05-10
from 3.0 mA to 7.0 mA. Add vendor cage 88379 for device types 11,
12, and 13 per letter dated 1 MAY 1997. -sld
Add device type 14.
Changes to case outlines U and X.
Add: note to paragraph 1.2.2 and table I, conditions. Add device types
15 through 27, case outlines M, N, and 9, vendor CAGE code
0EU86, condition D to paragraphs 4.2.a.1 and 4.3.3.b.1. Changes to
table I and dimensions to case outlines T, U, Y, and Z. Table I, add
note 3 to C
IN
and C
OUT
.
Table I; Changed the I
OL
from 8 mA to 6 mA for device types 07-14
and 21-27 for the V
OL
test. Added device types 28, 29, and 30.
Editorial changes throughout. -sld
DATE (YR-MO-DA)
96-08-23
96-10-22
97-04-28
98-02-18
APPROVED
K. A. Cottongim
K. A. Cottongim
K. A. Cottongim
E
F
G
98-06-22
99-04-30
01-02-08
K. A. Cottongim
K. A. Cottongim
Raymond Monnin
H
04-05-28
Raymond Monnin
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
H
15
H
16
H
17
H
18
H
19
H
20
H
21
H
1
H
22
H
2
H
23
H
3
H
24
H
4
H
25
H
5
H
26
H
6
H
27
H
7
H
28
H
8
H
29
H
9
H
30
H
10
H
31
H
11
H
12
H
13
H
14
REV
SHEET
PREPARED BY
Steve L. Duncan
CHECKED BY
Michael C. Jones
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS
AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
http://www.dscc.dla.mil/
APPROVED BY
Kendall A. Cottongim
MICROCIRCUIT, MEMORY, DIGITAL, SRAM,
512K x 8-BIT, MONOLITHIC SILICON
DRAWING APPROVAL DATE
95-11-07
REVISION LEVEL
H
SIZE
A
SHEET
CAGE CODE
67268
1 OF
31
5962-95613
DSCC FORM 2233
APR 97
5962-E263-04
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