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QM75TF-HB

Description
HIGH POWER SWITCHING USE INSULATED TYPE
CategoryDiscrete semiconductor    The transistor   
File Size89KB,5 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric View All

QM75TF-HB Overview

HIGH POWER SWITCHING USE INSULATED TYPE

QM75TF-HB Parametric

Parameter NameAttribute value
MakerMitsubishi
package instructionFLANGE MOUNT, R-PUFM-X19
Reach Compliance Codeunknow
Maximum collector current (IC)75 A
ConfigurationCOMPLEX
Minimum DC current gain (hFE)750
Maximum landing time (tf)3000 ns
JESD-30 codeR-PUFM-X19
Number of components6
Number of terminals19
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Transistor component materialsSILICON
VCEsat-Max2.5 V
MITSUBISHI TRANSISTOR MODULES
QM75TF-HB
HIGH POWER SWITCHING USE
INSULATED TYPE
QM75TF-HB
I
C
Collector current ..........................
75A
V
CEX
Collector-emitter voltage ...........
600V
h
FE
DC current gain.............................
750
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
Inverters, Servo drives, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
102±
0.3
6 14 6 14 6 17
7–M4
BuP
BuP EuP
BvP EvP
BwP EwP
4–φ5.5
P
BvP
EvP
BvN
EvN
U
V
BwP
EwP
BwN
EwN
74±
0.25
91±
0.3
P
BuN EuN
BvN EvN
BwNEwN
30
16.5
P
P
EuP
BuN
EuN
30
U
N
V
W
43
N
12
N
N
W
24.5
22
20
20
22
2
6.5
17
80±
0.25
11
27
Tab#110, t=0.5
8.1
30
+1.5
– 0.2
29.5
LABEL
7
Note: All Transistor Units are 3-Stage Darlingtons.
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