TPC8109 datasheet, PDF - EEWORLD Datasheet

TPC8109: DescriptionFIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE; CategoryDiscrete semiconductor The transistor; File Size241KB，4 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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TPC8109 Overview

FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	LEAD FREE, 2-6J1B, 8 PIN
Contacts	8
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	10 A
Maximum drain current (ID)	10 A
Maximum drain-source on-resistance	0.03 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8
Number of components	1
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	1.9 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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