PTF211802
LDMOS RF Power Field Effect Transistor
180 W, 2110–2170 MHz
Description
The PTF211802 is a 180 W, internally matched, laterally double–diffused,
GOLDMOS
push–pull FET intended for WCDMA applications from 2110 to
2170 MHz. Full gold metallization ensures excellent device lifetime and
reliability.
Features
•
•
Broadband internal matching
Typical two–carrier WCDMA performance
- Average output power = 38 W
- Gain = 15 dB
- Efficiency = 25%
- IM3 = –37 dBc
- ACPR < –42 dBc
Typical CW performance
- Output power at P–1dB = 180 W
- Efficiency = 50%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
180 W (CW) output power
Two–Carrier WCDMA Drive–Up
V
DD
= 28 V, I
DQ
= 2.0 A,
f
1
= 2140 MHz, f
2
= 2150 MHz, 3GPP
WCDMA signal, P/A R = 8 dB, 3.84 MHz BW
35
-30
•
•
Efficiency (%), Gain (dB)
30
25
20
15
10
-35
IMD (dBc), ACPR (dB)
•
•
•
Gain
Drain Efficiency
IM3
-40
-45
-50
-55
PTF211802A
Package 20275
ACPR
5
35
37
39
41
43
45
47
-60
Output Power (dBm), Average
PTF211802E
Package 30275
ESD:
Electrostatic discharge sensitive device — observe handling precautions!
RF Characteristics
at T
CASE
= 25°C unless otherwise indicated
WCDMA Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 2.0 A, P
OUT
= 38 W AVG
f
1
= 2140 MHz, f
2
= 2150 MHz, two–carrier 3GPP, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic
Intermodulation Distortion
Gain
Drain Efficiency
Symbol
IM3
G
ps
η
D
Min
—
—
—
Typ
–37
15
25
Max
—
—
—
Units
dBc
dB
%
Two–Tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 2.0 A, P
OUT
= 60 W PEP, f = 2110 MHz, tone spacing = 5 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Data Sheet
1
Symbol
G
ps
η
D
IMD
Min
12.5
20
—
Typ
15
22
–40
Max
—
—
–38
Units
dB
%
dBc
2004-02-13
PTF211802
DC Characteristics
at T
CASE
= 25°C unless otherwise indicated
Characteristic
Drain–Source Breakdown Voltage
Drain Leakage Current
On–State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 µA/side
V
DS
= 28 V, V
GS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 1.0 A/side
V
GS
= 10 V, V
DS
= 0 V
Symbol
V
(BR)DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
2.5
—
Typ
—
—
0.1
3.2
—
Max
—
1.0
—
4
1.0
Units
V
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain–Source Voltage
Gate–Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance
(T
CASE
= 70°C, 130 W CW)
PTF211802A
PTF211802E
PTF211802A
PTF211802E
Symbol
V
DSS
V
GS
T
J
P
D
P
D
T
STG
R
θJC
R
θJC
Value
65
–0.5 to +12
200
498
2.85
647
3.70
–40 to +150
0.35
0.27
Unit
V
V
°C
W
W/°C
W
W/°C
°C
°C/W
°C/W
Typical Performance
(data taken in a production test fixture)
Broadband Performance
V
DD
= 28 V, I
DQ
= 2.0 A, P
OUT
= 38 W
40
0
Return Loss
Efficiency
58
Ideal
Power Sweep, under Pulsed Conditions
V
DD
= 28 V, I
DQ
= 2.0 A, f = 2140 MHz,
pulse period = 1 ms, 0.8% duty cycle
Gain (dB), Efficiency (%)
Input Return Loss (dB)
35
30
25
20
15
10
Gain
-5
-10
-15
-20
-25
-30
56
Output Power (dBm)
P-1dB = 52.8 dBm
54
52
Actual
50
48
46
30
32
34
36
38
40
42
44
P-3dB = 53.6 dBm
5
2080
2100
2120
2140
2160
2180
-35
2200
Frequency (MHz)
Input Power (dBm)
Data Sheet
2
2004-02-13
PTF211802
Typical Performance
(cont.)
Intermodulation Distortion vs. Output Power
for selected currents
V
DD
= 28 V, f = 2140 MHz, tone spacing = 5 MHz
-20
Intermodulation Distortion Products
vs. Tone Spacing
V
DD
= 28 V, I
DQ
= 2.0 A, P
OUT
(PEP) = 170 W, f = 2140 MHz
-20
Intermodulation Distortion (dBc)
Intermodulation Distortion
(dBc)
-25
-30
-35
-40
-45
-50
-55
-60
-65
39
41
43
45
47
49
51
53
55
1.8 A
2.2 A
2.4 A
2.0 A
1.6 A
-25
-30
-35
-40
-45
-50
-55
-60
0
5
10
15
20
3rd Order
5th
7th
25
30
Output Power (dBm), PEP
Tone Spacing (MHz)
Two–Tone Drive–Up
V
DD
= 28 V, I
DQ
= 2.0 A, f = 2140 MHz,
tone spacing = 5 MHz
45
40
-20
30
Single–Carrier WCDMA Drive–Up
V
DD
= 28 V, I
DQ
= 2.0 A, f = 2140 MHz,
3GPP WCDMA signal, Test Model 1 w /16 DPCH,
67% clipping, P/A R = 8.7 dB, 3.84 MHz BW
-30
Drain Efficiency
25
-35
-25
Efficiency
IM3
-30
-35
-40
IM5
-45
IM7
-50
-55
-60
42
44
46
48
50
52
54
Intermodulation Distortion (dBc)
35
30
25
20
15
10
5
Drain Efficiency (%),
Gain (dB)
Drain Efficiency (%)
15
10
5
0
Gain
-45
ACPR
-50
-55
-60
37
38
39
40
41
42 43
44 45
46
47
Output Power (dBm), PEP
Output Power (dBm), Avg.
Data Sheet
3
2004-02-13
ACPR (dBc)
20
-40
PTF211802
Typical Performance
(cont.)
IM3, Drain Efficiency and Gain
vs. Supply Voltage
I
DQ
= 2.0 A, P
OUT
(PEP) = 170 W, f = 2140 MHz,
tone spacing = 5 MHz
45
-5
1.03
Bias Voltage vs. Case Temperature
Voltage normalized to typical gate voltage.
Series show current.
Drain Efficiency (%), Gain (dB)
Normalized Bias Voltage
40
35
30
25
20
15
10
5
0
22
24
26
28
30
32
34
Gain
Drain Efficiency
IM3
-10
-15
1.02
1.01
1.00
0.99
0.98
0.97
0.96
-20
3.00 A
6.00 A
9.00 A
12.00 A
15.00 A
18.00 A
-25
-30
-35
-40
-45
-50
IM3 (dBc)
-20
30
80
130
Drain Voltage (V)
Case Temperature (°C)
Broadband Circuit Impedance Data
V
DD
= 28 V, I
DQ
= 1900 mA, P
OUT
= 30 W AVG Two–Carrier WCDMA
Z
0
= 50
Ω
Z Source
D
Z Load
Z Load
2200 MHz
G
G
S
0.1
0.2
0.3
0.4
2070 MHz
D
Frequency
MHz
2070
2110
2140
2170
2200
R
Z Source
Ω
jX
-14.00
-13.48
-13.00
-12.60
-12.22
R
4.28
4.06
3.98
3.84
3.76
10.22
9.56
9.14
8.70
8.24
Z Load
Ω
jX
1.24
1.94
2.42
2.90
3.34
Z Source
2200 MHz
2070 MHz
Data Sheet
4
2004-02-13
PTF211802
Reference Circuit
VDD
C1
.01µF
QQ1
LM7805
R2
1.3KV
C2
.01µF
R1
1.2KV
R3
2KV
C3
.01
µF
Q1
BCP56
R4
10V
R6
1KV
l13
R5
24KV
R7
3KV
C4
0.1 µF
C5
8.2pF
R10
10V
DUT
l17
C12
10pF
C13
1µF
VDD
C14
100µF
50V
l7
l5
2
RF_IN
C6
20pF
l9
l11
l15
l19
l
21
l23
C16
C15 12pF
0.6pF
l26
l25
2
l27
RF_OUT
l1
l2
C7
0.1pF
l3
l4
C8
1.2pF
l6
C9
20pF
l
8
l10
l12
R11
10V
l16
l18
l20
C17
12pF
l22
l24
l14
C10
0.1µF
C11
8.2pF
C18
10pF
C19
1µF
VDD
C20
100 µF
50V
211802_sch-e
Reference Circuit Schematic for 2140 MHz
Circuit Assembly Information
DUT
PTF211802E
Circuit board
0.76 mm [.030”] thick,
ε
r
= 3.48
Microstrip
l1
l2
l3
l4
l5
l6
l7, l8
l9, l10
l11, l12
l13, l14
l15, l16
l17, l18
l19, l20
l21, l22
l23, l24
l25
l26
l27
Electrical Characteristics at 2140 MHz
0.110
λ,
50.0
Ω
0.175
λ,
50.0
Ω
0.205
λ,
35.4
Ω
0.092
λ,
35.4
Ω
0.500
λ,
50.0
Ω
0.052
λ,
50.0
Ω
0.110
λ,
31.8
Ω
0.073
λ,
22.4
Ω
0.089
λ,
9.10
Ω
0.337
λ,
50.4
Ω
0.132
λ,
8.42
Ω
0.250
λ,
50.0
Ω
0.035
λ,
13.2
Ω
0.057
λ,
36.5
Ω
0.061
λ,
50.0
Ω
0.500
λ,
50.0
Ω
0.264
λ,
35.4
Ω
0.136
λ,
50.0
Ω
LDMOS transistor
Rogers 4350, 2 oz. copper
Dimensions: L x W (mm.)
9.40 x 1.70
14.78 x 1.70
16.99 x 2.84
7.57 x 2.84
42.67 x 1.70
4.39 x 1.70
9.04 x 3.30
5.84 x 5.26
6.86 x 15.09
28.58 x 1.70
10.01 x 16.33
21.26 x 1.70
2.74 x 9.96
4.70 x 2.72
5.21 x 1.70
42.67 x 1.70
21.79 x 2.84
11.51 x 1.70
Dimensions: L x W (in.)
0.370 x 0.067
0.582 x 0.067
0.669 x 0.112
0.298 x 0.112
1.680 x 0.067
0.173 x 0.067
0.356 x 0.130
0.230 x 0.207
0.270 x 0.594
1.125 x 0.067
0.394 x 0.643
0.837 x 0.067
0.108 x 0.392
0.185 x 0.107
0.205 x 0.067
1.680 x 0.067
0.858 x 0.112
0.453 x 0.067
Data Sheet
5
2004-02-13
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