PTF211301
LDMOS RF Power Field Effect Transistor
130 W, 2110–2170 MHz
Description
The PTF211301 is a 130–W, internally matched
GOLDMOS
FET intended
for WCDMA applications. It is characaterized for single– and two–carrier
WCDMA operation from 2110 to 2170 MHz. Full gold metallization ensures
excellent device lifetime and reliability.
Features
•
•
Broadband internal matching
Typical two–carrier WCDMA performance at
2140 MHz
- Average output power = 28 W
- Linear Gain = 13.5 dB
- Efficiency = 25%
- Intermodulation distortion = –37 dBc
- Adjacent channel power = –42 dBc
Typical CW performance, 2170 MHz, 28 V
- Output power at P–1dB = 148 W
- Efficiency = 50%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
130 W (CW) output power
Two–Carrier WCDMA Drive-Up
V
DD
= 28 V, I
DQ
= 1.50 A, f = 2140 MHz,
3GPP WCDMA signal, P/A R = 8 dB,
10 MHz carrier spacing
-30
-35
35
30
Efficiency
IM3
•
•
Drain Efficiency (%)
IM3 (dBc),
ACPR (dBc)
-40
-45
-50
-55
-60
36
38
25
20
15
10
5
•
•
ACPR
40
42
44
46
Average Output Power (dBm)
PTF211301A
Package 20260
RF Characteristics
at T
CASE
= 25°C unless otherwise indicated
WCDMA Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 1.5 A, P
OUT
= 28 W average
f
1
= 2140 MHz, f
2
= 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8
dB @ 0.01% CCDF
Characteristic
Intermodulation Distortion
Gain
Drain Efficiency
Symbol
IMD
G
ps
Min
—
—
—
Typ
–37
13.5
25
Max
—
—
—
Units
dBc
dB
%
η
D
Two–Tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 1.5 A, P
OUT
= 120 W PEP, f = 2170 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
12
34
—
Typ
13.5
37
–30
Max
—
—
–28
Units
dB
%
dBc
η
D
IMD
ESD:
Electrostatic discharge sensitive device — observe handling precautions!
Data Sheet
1
2004-01-02
PTF211301
DC Characteristics
at T
CASE
= 25°C unless otherwise indicated
Characteristic
Drain–Source Breakdown Voltage
Drain Leakage Current
On–State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 µA
V
DS
= 28 V, V
GS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 1.5 A
V
GS
= 10 V, V
DS
= 0 V
Symbol
V
(BR)DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
2.5
—
Typ
—
—
0.07
3.2
—
Max
—
1.0
—
4.0
1.0
Units
V
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain–Source Voltage
Gate–Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 130 W CW)
T
STG
R
θJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
–0.5 to +12
200
350
2.0
–40 to +150
0.50
Unit
V
V
°C
W
W/°C
°C
°C/W
Typical Performance
(data taken in a production test fixture)
Broadband Performance
V
DD
= 28 V, I
DQ
= 1.50 A, P
OUT
= 44 dBm
Intermodulation Distortion Products &
Efficiency vs. Output Power
V
DD
= 28V, I
DQ
= 1.50 A, f = 2140 MHz,
tone spacing = 1 MHz
-30
40
Efficiency
35
30
IM3
25
20
15
IM5
IM7
38
40
42
44
46
48
50
52
10
5
0
-35
-40
45
-5
Gain (dB), Efficiency (%)
35
30
25
20
15
Gain
Efficiency
-15
-20
-25
-30
-35
-40
2210
IMD (dBc)
-45
-50
-55
-60
-65
-70
10
2060
2110
2160
Frequency (MHz)
Output Power, PEP (dBm)
Data Sheet
2
2004-01-02
Drain Efficiency (%)
Input Return Loss
Input Return Loss (dB)
40
-10
PTF211301
Typical Performance
(cont.)
Intermodulation Distortion vs. Output Power
V
DD
= 28V, f = 2140 MHz, tone spacing = 1 MHz
-30
-35
1.65 A
-40
-45
-50
-55
-60
-65
38
40
42
44
46
48
50
52
1.20 A
1.80 A
Power Sweep, CW Conditions
V
DD
= 28 V, I
DQ
= 1.50 A, f = 2170 MHz
15
14
Gain
55
3rd Order IMD (dBc)
Gain (dB)
13
12
11
35
25
15
5
37
42
47
52
Efficiency
1.35 A
1.50 A
10
Peak Output Power (dBm)
Output Power (dBm)
Single–Carrier WCDMA Drive–Up
V
DD
= 28 V, I
DQ
= 1.50 A, f = 2140 MHz, 3GPP WCDMA
signal, P/A R = 8.5 dB, 3.84 MHz bandwidth
-40
Efficiency
-42
-44
-46
-48
ACPR Low
-50
34
36
38
40
42
44
ACPR Up
0
25
20
15
10
5
IM3, Gain & Drain Efficiency
vs Supply Voltage
I
DQ
= 1.50 A, f = 2140 MHz, P
OUT
= 47.8 dBm PEP,
tone spacing = 1 MHz
0
-5
45
40
Drain Efficiency (%)
IM3 (dBc)
-15
-20
-25
-30
-35
-40
-45
23 24 25
26
27
28 29 30 31 32 33
IM3 Up
Gain
30
25
20
15
10
5
0
Average Output Power (dBm)
Supply Voltage (V)
Data Sheet
3
2004-01-02
Drain Efficiency (%)
Adjacent Channel
Power Ratio (dBc)
-10
Efficiency
35
Drain Efficiency (%)
45
PTF211301
Typical Performance
(cont.)
Intermodulation Distortion Products
vs. Tone Spacing
V
DD
= 28 V, I
DQ
= 1.50 A, , P
OUT
= 50.8 dBm PEP,
f = 2140 MHz
-20
Gate-Source Voltage vs. Case Temperature
Voltage normalized to typical gate voltage.
Series show current.
1.03
2.25 A
4.50 A
6.75 A
9.00 A
11.25 A
13.50 A
Intermodulation Distortion
(dBc)
-30
3rd Order
-40
5th Order
-50
7th Order
-60
0
5
10
15
20
25
30
35
Normalized Bias Voltage
1.02
1.01
1.00
0.99
0.98
0.97
0.96
-20
20
60
100
Tone Spacing (MHz)
Case Temperature (°C)
Broadband Circuit Impedance
RD
G
E
D
Z
0
= 50
Ω
0 .1
Z Source
Z Load
E
NGT
HS
T
OW
A
G
S
Z Load
2220 MHz
0.0
0.1
D
LOA
D
-
S
TOW
AR
NGT
H
ELE
2050 MHz
Frequency
MHz
2050
2110
2140
2170
2220
R
Z Source
Ω
jX
-7.02
-6.76
-6.75
-6.54
-6.36
R
1.43
1.27
1.19
1.25
1.12
6.58
6.14
5.96
5.82
5.45
Z Load
Ω
jX
0.19
0.66
0.80
1.09
1.49
Z Source
0.1
2220 MHz
2050 MHz
Data Sheet
4
W
<---
AV
2004-01-02
0.2
Embedded System
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