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PTF080601F

Description
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz
CategoryDiscrete semiconductor    The transistor   
File Size276KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

PTF080601F Overview

LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

PTF080601F Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
MakerInfineon
package instructionFLATPACK, R-CDFP-F2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Is SamacsysN
Other featuresHIGH RELIABILITY
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage65 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-CDFP-F2
JESD-609 codee3
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLATPACK
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)227 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
Developmental PTF080601
LDMOS RF Power Field Effect Transistor
60 W, 860–960 MHz
Description
The PTF080601 is a 60–W, internally matched
GOLDMOS
FET intended
for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold
metallization ensures excellent device lifetime and reliability.
Typical EDGE Modulation Spectrum Performance
Mod Spectrum vs. Output Power
V
DD
= 28 V, I
DQ
= 550 mA, f = 959.8 MHz
-20
Efficiency
50
45
40
35
30
400KHz
25
20
600KHz
15
10
5
32
34
36
38
40
42
44
46
Features
Broadband internal matching
Typical EDGE performance
- Average output power = 30 W
- Gain = 18 dB
- Efficiency = 40%
Typical CW performance
- Output power at P–1dB = 90 W
- Gain = 17 dB
- Efficiency = 60%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
60 W (CW) output power
Modulation Spectrum (dB)
-30
-40
-50
-60
-70
-80
-90
Efficiency (%)
PTF080601A
Package 20248
PTF080601E
Package 30248
PTF080601F
Package 31248
Output Power (dBm)
RF Characteristics
at T
CASE
= 25°C unless otherwise indicated
Two-Tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 550 mA, P
OUT
= 60 W PEP, f
C
= 960 MHz, tone spacing = 1000 kHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
η
D
IMD
Min
Typ
18
42
–32
Max
Units
dB
%
dBc
EDGE Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 550 mA, P
OUT
= 30 W, f = 959.8 MHz
Characteristic
Error Vector Magnitude
Modulation Spectrum @ 400 KHz
Modulation Spectrum @ 600 KHz
Gain
Drain Efficiency
Developmental Data Sheet
1
Symbol
EVM (RMS)
ACPR
ACPR
G
ps
η
D
Min
Typ
2.0
–61
–74
18
40
Max
Units
%
dBc
dBc
dB
%
2003-12-05

PTF080601F Related Products

PTF080601F PTF080601E PTF080601A PTF080601
Description LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz
Maker Infineon Infineon Infineon -
package instruction FLATPACK, R-CDFP-F2 FLANGE MOUNT, R-CDFM-F2 FLANGE MOUNT, R-CDFM-F2 -
Contacts 2 2 2 -
Reach Compliance Code compli compli compli -
ECCN code EAR99 EAR99 EAR99 -
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY -
Shell connection SOURCE SOURCE SOURCE -
Configuration SINGLE SINGLE SINGLE -
Minimum drain-source breakdown voltage 65 V 65 V 65 V -
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND -
JESD-30 code R-CDFP-F2 R-CDFM-F2 R-CDFM-F2 -
JESD-609 code e3 e3 e3 -
Number of components 1 1 1 -
Number of terminals 2 2 2 -
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE -
Maximum operating temperature 200 °C 200 °C 200 °C -
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR -
Package form FLATPACK FLANGE MOUNT FLANGE MOUNT -
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL -
Maximum power dissipation(Abs) 227 W 227 W 180 W -
Certification status Not Qualified Not Qualified Not Qualified -
surface mount YES YES YES -
Terminal surface MATTE TIN MATTE TIN MATTE TIN -
Terminal form FLAT FLAT FLAT -
Terminal location DUAL DUAL DUAL -
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER -
Transistor component materials SILICON SILICON SILICON -
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