Developmental PTF080601
LDMOS RF Power Field Effect Transistor
60 W, 860–960 MHz
Description
The PTF080601 is a 60–W, internally matched
GOLDMOS
FET intended
for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold
metallization ensures excellent device lifetime and reliability.
Typical EDGE Modulation Spectrum Performance
Mod Spectrum vs. Output Power
V
DD
= 28 V, I
DQ
= 550 mA, f = 959.8 MHz
-20
Efficiency
50
45
40
35
30
400KHz
25
20
600KHz
15
10
5
32
34
36
38
40
42
44
46
Features
•
•
Broadband internal matching
Typical EDGE performance
- Average output power = 30 W
- Gain = 18 dB
- Efficiency = 40%
Typical CW performance
- Output power at P–1dB = 90 W
- Gain = 17 dB
- Efficiency = 60%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
60 W (CW) output power
•
Modulation Spectrum (dB)
-30
-40
-50
-60
-70
-80
-90
•
Efficiency (%)
•
•
•
PTF080601A
Package 20248
PTF080601E
Package 30248
PTF080601F
Package 31248
Output Power (dBm)
RF Characteristics
at T
CASE
= 25°C unless otherwise indicated
Two-Tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 550 mA, P
OUT
= 60 W PEP, f
C
= 960 MHz, tone spacing = 1000 kHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
η
D
IMD
Min
—
—
—
Typ
18
42
–32
Max
—
—
—
Units
dB
%
dBc
EDGE Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 550 mA, P
OUT
= 30 W, f = 959.8 MHz
Characteristic
Error Vector Magnitude
Modulation Spectrum @ 400 KHz
Modulation Spectrum @ 600 KHz
Gain
Drain Efficiency
Developmental Data Sheet
1
Symbol
EVM (RMS)
ACPR
ACPR
G
ps
η
D
Min
—
—
—
—
—
Typ
2.0
–61
–74
18
40
Max
—
—
—
—
—
Units
%
dBc
dBc
dB
%
2003-12-05
Developmental PTF080601
DC Characteristics
at T
CASE
= 25°C unless otherwise indicated
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 µA
V
DS
= 28 V, V
GS
= 0 V
V
GS
= 10 V, I
DS
= 1 A
V
DS
= 28 V, I
DQ
= 550 mA
V
GS
= 10 V, V
DS
= 0 V
Symbol
V
(BR)DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
—
—
—
—
—
Typ
65
1.0
0.1
3.2
—
Max
—
—
—
—
1.0
Units
V
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C) PTF080601A
PTF080601E
T
STG
R
θJC
R
θJC
PTF080601E
P
D
PTF080601A
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
–0.5 to +12
200
180
1.03
195
1.11
–40 to +150
0.972
0.897
Unit
V
V
°C
W
W/°C
W
W/°C
°C
°C/W
°C/W
Developmental Data Sheet
2
2003-12-05
Developmental PTF080601
Type
PTF080601A
PTF080601E
PTF080601F
Package Outline
20248
30248
31249
Package Description
Standard ceramic, flange
Thermally enhanced, flange
Thermally enhanced, no flange
Marking
PTF080601A
PTF080601E
PTF080601F
Package Outline Specifications
Package 20248
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Developmental Data Sheet
3
2003-12-05
Developmental PTF080601
Package Outline Specifications
Package 30248
(45° X 2.72
[.107])
C
L
D
S
9.78
[.385]
19.43 ±0.51
[.765±.020]
+0.10
LID 9.40 -0.15
C
L
+.004
[.370 -.006
]
2X 4.83±0.51
[.190±.020]
G
2X R1.63
[.064]
4X R1.52
[.060]
2X 12.70
[.500]
27.94
[1.100]
1.02
[.040]
19.81±0.20
[.780±.008]
SPH 1.57
[.062]
3.76±0.38
[.140±.015]
0.025 [.001] -A-
34.04
[1.340]
0.51
[.020]
ERA-H-30248
Notes: Unless otherwise specified
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. Pins: D = drain, S = source, G = gate
4. Lead thickness: 0.10± 0.051/0.025 [.004±.002/.001]
5. Lids are toleranced with reference to leads.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Developmental Data Sheet
4
2003-12-05
Developmental PTF080601
Package Outline Specifications
Package 31248
Notes: Unless otherwise specified
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. Pins: D = drain, S = source, G = gate
4. Lead thickness: 0.10± 0.051/0.025 [.004±.002/.001]
5. Lids are toleranced with reference to leads.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Developmental Data Sheet
5
2003-12-05
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