DIVIDE-BY-4 PRESCALER
UPB582A
UPB582B
UPB582C
FEATURES
• HIGH FREQUENCY OPERATION TO 2.8 GHz
• WIDE BAND OPERATION
• SINGLE SUPPLY VOLTAGE:
V
CC
= 5 V
±10%
TEST CIRCUITS
UPB582A
V
CC
4
3
5
6
1
8
7
IN
• COMPLEMENTARY OUTPUTS
2
OUT
DESCRIPTION
The UPB582 series of devices are divide-by-4 silicon
bipolar digital prescalers. They feature high frequency
response and operate from a single 5 volt supply. The
series is available in three package styles: 8 pin can
(UPB582A); 8 lead ceramic flat package (UPB582B) and
an 8 pin DIP (UPB582C). Applications include: frequency
synthesizers, division and prescaling.
UPB582B, C
V
CC
1
IN
2
3
4
8
7
6
5
*
OUT
Note: All capacitors are 2200 pF, all resistors are 50 ohms.
* Pin 8 is not connected for UPB582C.
ELECTRICAL CHARACTERISTICS
(V
CC
= 5.0
±0.5
V, Z
S
= Z
L
= 50
Ω)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CC
f
IN
PARAMETERS AND CONDITIONS
Power Supply Current
Frequency Response at
P
IN =
-10 to -5 dBm
1
P
IN =
-5 to 0 dBm
1
P
IN
= 0 to +5 dBm
1
P
IN
= -2 to +10 dBm
2
P
IN
= +3 to +10 dBm
2
P
IN
= -5 to +10 dBm
3
P
IN
= -5 to +10 dBm
4
P
IN
= -3 to +10 dBm
5
Input Power at
f
IN
= 0.5 to 2.4 GHz
1
f
IN
= 0.5 to 2.6 GHz
1
f
IN
= 0.5 to 2.8 GHz
1
f
IN
= 0.5 to 2.6 GHz
2
f
IN
= 0.5 to 2.8 GHz
2
f
IN
= 0.5 to 2.2 GHz
3
f
IN
= 0.5 to 2.4 GHz
4
f
IN
= 0.5 to 2.4 GHz
5
Output Power
6
Thermal Resistance, Junction to Case
(UPB582B)
UNITS
mA
GHz
GHz
GHz
GHz
GHz
GHz
GHz
GHz
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
°C/W
MIN
25
UPB582A
A08
TYP
45
MAX
60
MIN
25
0.5
0.5
0.5
0.5
0.5
2.6
2.8
0.5
0.5
0.5
-10
-5
0
-2
+3
+10
+10
-5
-5
-3
-12
-8
-12
-8
20
-12
-8
+10
+10
+10
+5
+5
+5
2.2
2.4
2.4
UPB582B
BF08
TYP
45
MAX
60
2.4
2.6
2.8
MIN
25
UPB582C
C08
TYP
45
MAX
60
P
IN
P
OUT
R
TH (J-C)
Notes:
1. T
A
= -40 to +85°C.
2. T
A
= -20 to +75°C.
3. T
A
= -35 to +85°C.
4. T
A
= -20 to +65
°C,
V
CC
= 5.0
±
0.25 V.
5. T
A
= -20 to +70°C, V
CC
= 5.0
±
0.25 V.
6. T
A
= +25°C, f
IN
= 2.0 GHz, P
IN
= 0 dBm.
California Eastern Laboratories
UPB582A, UPB582B, UPB582C
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
PARAMETERS
V
CC
Supply Voltage
V
IN
P
IN
P
D
Input Voltage
Input Power
Total Power Dissipation
UPB582B
2
UPB582A
UPB582C
Operating Temperature
UPB582B
UPB582A, C
Storage Temperature
UPB582B
UPB582A
UPB582C
UNITS
V
V
dBm
mW
mW
mW
°C
°C
°C
°C
°C
RATINGS
-0.5 to 6.0
-0.5 to V
CC
+0.5
+10
1500
750
600
-55 to +125
-55 to +85
-65 to +200
-55 to +200
-55 to +125
RECOMMENDED
OPERATING CONDITIONS
(T
A
= 25°C)
SYMBOL
V
CC
T
OP
PARAMETER
Supply Voltage
Operating Temperature
UPB582B
UPB582A, C
UNITS
V
°C
°C
RATINGS
4.5 to 5.5
-40 to +85
-20 to +75
T
OP
T
STG
Notes
1. Operation in excess of any one of these parameters may result in
permanent damage.
2. T
A
= Absolute Maximum Operating Temperature.
Note: Because of the high internal gain and gain compression of the
UPB582, this device is prone to self-oscillation in the absence of an RF
input signal. If the device will be used in an application where DC power
will be applied in the absence of an RF input signal, this self-oscillation
can be suppressed by any of the following means:
*
Add a shunt resistor from the RF input line to ground. The
blocking capacitor should be between the resistor and the
UPB582, but physical separation should be minimized. Typically a
resistor value between 50 and 100 ohms will suppress the self-
oscillation.
*
Apply a DC offset voltage of +3.0 volts to the INPUT pin. The
voltage source should be isolated from the INPUT pin by a series
1000 ohm resistor.
*
Apply a DC offset voltage of +1.5 volts to the BYPASS pin. The
voltage source should be isolated from the BYPASS pin by a
series 1000 ohm resistor.
All these approaches reduce the input sensitivity of the UPB582 (by as
much as 3 dB for the example of a 50 ohm shunt resistor), but otherwise
have no affect on the reliability or other electrical characteristics of this
device.
TYPICAL PERFORMANCE CURVES
(V
CC
= 5 V, T
A
= 25°C )
UPB582A
INPUT POWER vs. FREQUENCY
40
30
UPB582B
INPUT POWER vs. FREQUENCY
20
Input Power, P
IN
(dBm)
Input Power, P
IN
(dBm)
10
20
10
0
-10
-20
-30
P
IN
MAX
Guaranteed Operating
Window
P
IN
MIN
0
Guaranteed
Operating Window
-10
-20
-30
-40
0.5
1
2
5
Frequency, f (GHz)
UPB582B
INPUT POWER vs. FREQUENCY AND
TEMPERATURE
20
-80
-90
0
0.5
1
1.5
2
2.5
3
3.5
Frequency, f (GHz)
UPB582A
SSB PHASE NOISE vs.
OFFSET FROM CARRIER
Input Power, P
IN
(dBm)
10
T
A
= 85˚C
T
A
= 25˚C
T
A
= -20˚C
V
CC
= 5 V
-10
SSB Phase Noise (dBc/Hz)
-100
-110
-120
-130
-140
-150
-160
-170
f
IN
= 500 MHz
T
A
= 25˚C
0
-20
-30
-180
0
0.5
1
1.5
2
2.5
3
3.5
1
10
100
1K
10K
100K
1M
Frequency, f (GHz)
Offset from Carrier (Hz)
UPB582A, UPB582B, UPB582C
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C unless otherwise noted)
UPB582C
INPUT POWER vs. FREQUENCY
30
20
P
IN
MAX
30
20
T
A
= 75˚C
T
A
= 25˚C
T
A
= -25˚C
V
CC
= 5 V
10
0
UPB582C
INPUT POWER vs. FREQUENCY AND
TEMPERATURE
Input Power, P
IN
(dBm)
10
0
-10
P
IN
MIN
-20
-30
-40
0.5
1
2
5
Guaranteed
Operating
Window
Input Power, P
IN
(dBm)
*
-10
-20
-30
-40
0.5
1
2
3
5
Frequency, f (GHz)
*See special conditions in Electrical Characteristics Table.
UPB582C
OUTPUT POWER VS.
TEMPERATURE AND VOLTAGE
80
10
V
CC
= 5.5 V
V
CC
= 5.0 V
V
CC
= 4.5 V
Frequency, f (GHz)
UPB582C
CIRCUIT CURRENT vs.
TEMPERATURE AND VOLTAGE
Output Power, P
OUT
(dBm)
Circuit Current, I
CC
(mA)
V
CC
= 5.5 V
60
V
CC
= 5.0 V
V
CC
= 4.5 V
40
0
-10
-20
20
-30
-25
0
25
50
75
0
-25
0
25
50
75
Ambient Temperature, T
A
(°C)
Ambient Temperature, T
A
(°C)
UPB582C INPUT AND
OUTPUT S-PARAMETERS
V
CC
= 5.0 V, I
CC
= 45 mA
Frequency
(GHz)
0.20
0.40
0.80
1.20
1.60
2.00
2.40
2.80
3.20
S
11
MAG
0.079
0.246
0.231
0.334
0.422
0.553
0.645
0.690
0.674
ANG
142
119
100
91
84
75
63
49
33
Frequency
(GHz)
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
S
22
MAG
0.329
0.395
0.452
0.482
0.484
0.466
0.460
0.474
0.481
ANG
142
104
79
59
45
36
31
26
20
UPB582A, UPB582B, UPB582C
OUTLINE DIMENSIONS
(Units in mm)
UPB582A
PACKAGE OUTLINE A08
UPB582B
PACKAGE OUTLINE BF08
7.0±0.5
1.27 1.27 1.27
±0.1 ±0.1 ±0.1
1.7 MAX
9.40φ MAX
8.50φ MAX
0.38
4.50 MAX
8
7
6
5
12.5 MIN
0.45φ
5.08φ
45˚
0.8
8
0.8
45˚
7
5
6
1
2
3
4
PIN
CONNECTIONS
1. Output 1
2. Output 2
3. V
CC
4. GND
5. Input
6. Bypass
7. GND
8. GND
10.4±0.5
2.6
4.4±0.2
1
2
0.4
5.0±0.2
3
4
+0.05
0.2
-0.02
UPB582C
PACKAGE OUTLINE C08
8
7
6
5
PIN
CONNECTIONS
1. V
CC
2. Input
3. Bypass
4. GND
5.
6.
7.
8.
GND
Output 1
Output 2
V
CC
PIN CONNECTIONS
1. V
CC
5. GND
2. Input
6. Output 1
3. Bypass
7. Output 2
4. GND
8. NC
1
3
2
4
10.16 MAX
0.9 MIN
4.31 MAX
5.08 MAX
0.51 MIN
3.2 ± 0.3 1.4 MIN
2.54
0.50
1.27
+0.10
0.25 -0.05
0 ~15˚
7.62
6.4
EXCLUSIVE AGENT FOR
NEC Corporation
RF & MICROWAVE SEMICONDUCTOR PRODUCTS - U.S. & CANADA
CALIFORNIA EASTERN LABORATORIES, INC
·
Headquarters
·
4590 Patrick Henry Drive
·
Santa Clara, CA 95054-1817
·
(408) 988-3500
·
Telex 34-6393/FAX (408) 988-0279
DATA SUBJECT TO CHANGE WITHOUT NOTICE
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