DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
PSS9013 series
20 V NPN general purpose
transistors
Product specification
Supersedes data of 2003 May 15
2004 Aug 10
Philips Semiconductors
Product specification
20 V NPN general purpose transistors
FEATURES
•
High power dissipation: 710 mW
•
Low collector capacitance
•
Low collector-emitter saturation voltage
•
High current capability.
APPLICATIONS
•
General purpose switching and amplification.
DESCRIPTION
NPN general purpose transistor in a SOT54 (TO-92)
leaded plastic package. PNP complement:
PSS9012 series.
MARKING
TYPE NUMBER
PSS9013G
PSS9013H
MARKING CODE
S9013G
S9013H
Fig.1
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
I
CM
PINNING
PIN
1
2
3
collector
base
emitter
PSS9013 series
PARAMETER
collector-emitter voltage
collector current (DC)
peak collector current
MAX.
20
500
1
UNIT
V
mA
A
DESCRIPTION
1
handbook, halfpage
2
3
1
2
3
MAM279
Simplified outline (SOT54; TO-92) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated and standard footprint.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
40
20
5
500
1
100
710
+150
150
+150
V
V
V
mA
A
mA
mW
°C
°C
°C
UNIT
2004 Aug 10
2
Philips Semiconductors
Product specification
20 V NPN general purpose transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
in free air; note 1
PSS9013 series
VALUE
175
UNIT
K/W
1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated and standard footprint.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
h
FE
PARAMETER
collector-base cut-off current
emitter-base cut-off current
DC current gain
DC current gain
PSS9013G
PSS9013H
V
CEsat
V
BEsat
V
BEon
C
c
collector-emitter saturation
voltage
base-emitter saturation
voltage
base-emitter turn on voltage
collector capacitance
I
C
= 100 mA; I
B
= 10 mA
I
C
= 500 mA; I
B
= 50 mA
I
C
= 500 mA; I
B
= 50 mA
V
CE
= 1 V; I
C
= 100mA
CONDITIONS
V
CB
= 35 V; I
E
= 0
V
CB
= 35 V; I
E
= 0; T
j
= 150
°C
V
EB
= 5 V; I
C
= 0
V
CE
= 1 V; I
C
= 500 mA
V
CE
= 1 V; I
C
= 50 mA
112
144
−
−
−
−
−
−
60
250
1
760
5
166
202
250
600
1.2
1000
−
mV
mV
V
mV
pF
−
−
−
40
MIN.
−
−
−
−
TYP.
MAX.
100
50
100
−
UNIT
nA
µA
nA
V
CB
= 6 V; I
E
= I
e
= 0; f = 1 MHz
−
2004 Aug 10
3
Philips Semiconductors
Product specification
20 V NPN general purpose transistors
PSS9013 series
handbook, halfpage
10
3
MLE086
handbook, halfpage
30
MLE087
fT
(MHz)
IC
(mA)
20
(1)
(2)
(3)
(4)
(5)
10
2
10
(6)
(7)
10
1
10
10
2
IC (mA)
10
3
0
0
T
amb
= 25
°C.
(1) I
B
= 140
µA.
(2) I
B
= 120
µA.
(3) I
B
= 100
µA.
(4) I
B
= 80
µA.
(5) I
B
= 60
µA.
(6) I
B
= 40
µA.
(7) I
B
= 20
µA.
4
8
12
20
16
VCE (V)
V
CE
= 6 V.
Fig.2
Transition frequency as a function of
collector current; typical values.
Fig.3
Collector current as a function of
collector-emitter voltage; typical values.
handbook, halfpage
300
MLE088
handbook, halfpage
300
MLE089
hFE
(1)
hFE
(1)
200
(2)
200
(2)
100
(3)
100
(3)
0
10
−1
1
10
10
2
IC (mA)
10
3
0
10
−1
1
10
10
2
IC (mA)
10
3
V
CE
= 1 V.
(1) T
amb
= 100
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
V
CE
= 2 V.
(1) T
amb
= 100
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
Fig.4
DC current gain as a function of collector
current; typical values.
Fig.5
DC current gain as a function of collector
current; typical values.
2004 Aug 10
4
Philips Semiconductors
Product specification
20 V NPN general purpose transistors
PSS9013 series
handbook, halfpage
10
3
MLE090
handbook, halfpage
10
3
MLE091
VCEsat
(mV)
(1)
VCEsat
(mV)
10
2
(3)
(1)
10
2
(2)
10
10
(2)
(3)
1
10
−1
1
10
10
2
IC (mA)
10
3
1
10
−1
1
10
10
2
IC (mA)
10
3
I
C
/I
B
= 10.
(1) T
amb
= 100
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
I
C
/I
B
= 20.
(1) T
amb
= 100
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
Fig.6
Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.7
Collector-emitter saturation voltage as a
function of collector current; typical values.
10
3
handbook, halfpage
RCEsat
(Ω)
10
2
MLE092
10
3
handbook, halfpage
RCEsat
(Ω)
10
2
MLE093
10
10
1
(2)
(1)
(3)
1
(1)
(2)
(3)
10
−1
10
−1
I
C
/I
B
= 10.
(1) T
amb
= 100
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
1
10
10
2
IC (mA)
10
3
10
−1
10
−1
I
C
/I
B
= 20.
(1) T
amb
= 100
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
1
10
10
2
IC (mA)
10
3
Fig.8
Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
Fig.9
Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
2004 Aug 10
5
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