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PSMN009-100W

Description
Circular Connector; Body Material:Aluminum Alloy; Series:MS3111; Number of Contacts:6; Connector Shell Size:10; Connecting Termination:Solder; Circular Shell Style:Cable Receptacle; Circular Contact Gender:Socket
CategoryDiscrete semiconductor    The transistor   
File Size94KB,8 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
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PSMN009-100W Overview

Circular Connector; Body Material:Aluminum Alloy; Series:MS3111; Number of Contacts:6; Connector Shell Size:10; Connecting Termination:Solder; Circular Shell Style:Cable Receptacle; Circular Contact Gender:Socket

PSMN009-100W Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
ConfigurationSingle
Maximum drain current (Abs) (ID)100 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)300 W
surface mountNO
Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
FEATURES
’Trench’
technology
• Very low on-state resistance
• Fast switching
• Low thermal resistance
g
PSMN009-100W
QUICK REFERENCE DATA
d
SYMBOL
V
DSS
= 100 V
I
D
= 100 A
R
DS(ON)
9 mΩ
s
GENERAL DESCRIPTION
SiliconMAX
products use the latest
Philips Trench technology to
achieve the lowest possible
on-state resistance in each
package at each voltage rating.
Applications:-
• d.c. to d.c. converters
• switched mode power supplies
The PSMN009-100W is supplied in
the SOT429 (TO247) conventional
leaded package.
PINNING
PIN
1
2
3
tab
gate
drain
source
drain
DESCRIPTION
SOT429 (TO247)
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
V
DGR
V
GS
I
D
I
DM
P
D
T
j
, T
stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
CONDITIONS
T
j
= 25 ˚C to 175˚C
T
j
= 25 ˚C to 175˚C; R
GS
= 20 kΩ
T
mb
= 25 ˚C
T
mb
= 100 ˚C
T
mb
= 25 ˚C
T
mb
= 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
100
100
±
20
100
1
79
300
300
175
UNIT
V
V
V
A
A
A
W
˚C
1
Maximum continuous current limited by package.
October 1999
1
Rev 1.100
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