Philips Semiconductors
Product specification
N-channel logic level TrenchMOS transistor PSMN004-25B, PSMN004-25P
FEATURES
•
’Trench’
technology
• Very low on-state resistance
• Fast switching
• Low thermal resistance
g
SYMBOL
d
QUICK REFERENCE DATA
V
DSS
= 25 V
I
D
= 75 A
R
DS(ON)
≤
4 mΩ (V
GS
= 10 V)
R
DS(ON)
≤
5 mΩ (V
GS
= 5 V)
s
GENERAL DESCRIPTION
SiliconMAX
products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in
each package at each voltage rating.
Applications:-
• d.c. to d.c. converters
• switched mode power supplies
The PSMN004-25P is supplied in the SOT78 (TO220AB) conventional leaded package.
The PSMN004-25B is supplied in the SOT404 surface mounting package.
PINNING
PIN
1
2
3
tab
gate
drain
1
source
drain
DESCRIPTION
SOT78 (TO220AB)
tab
SOT404 (D
2
PAK)
tab
2
1 23
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
V
DGR
V
GS
V
GSM
I
D
I
DM
P
D
T
j
, T
stg
Drain-source voltage
Drain-gate voltage
Continuous gate-source
voltage
Peak pulsed gate-source
voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
CONDITIONS
T
j
= 25 ˚C to 175˚C
T
j
= 25 ˚C to 175˚C; R
GS
= 20 kΩ
T
j
≤
150 ˚C
T
mb
= 25 ˚C; V
GS
= 5 V
T
mb
= 100 ˚C; V
GS
= 5 V
T
mb
= 25 ˚C
T
mb
= 25 ˚C
MIN.
-
-
-
-
-
-
-
-
- 55
MAX.
25
25
±
16
±
20
75
2
75
2
240
230
175
UNIT
V
V
V
V
A
A
A
W
˚C
1
It is not possible to make connection to pin:2 of the SOT404 package
2
maximum continuous current limited by package
January 2000
1
Rev 1.200
Philips Semiconductors
Product specification
N-channel logic level TrenchMOS transistor
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
R
th j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
PSMN004-25B, PSMN004-25P
MIN.
-
TYP. MAX. UNIT
-
60
50
0.65
-
-
K/W
K/W
K/W
SOT78 package, vertical in still air
SOT404 package, pcb mounted, minimum
footprint
-
-
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
E
AS
I
AS
Non-repetitive avalanche
energy
Non-repetitive avalanche
current
CONDITIONS
Unclamped inductive load, I
AS
= 75 A;
t
p
= 100
µs;
T
j
prior to avalanche = 25˚C;
V
DD
≤
15 V; R
GS
= 50
Ω;
V
GS
= 5 V
MIN.
-
-
MAX.
120
75
UNIT
mJ
A
ELECTRICAL CHARACTERISTICS
T
j
= 25˚C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
V
GS(TO)
R
DS(ON)
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source on-state
resistance
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
T
j
= -55˚C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 175˚C
T
j
= -55˚C
V
GS
= 10 V; I
D
= 25 A
V
GS
= 5 V; I
D
= 25 A
V
GS
= 4.5 V; I
D
= 25 A
V
GS
= 5 V; I
D
= 25 A; T
j
= 175˚C
Gate-source leakage current V
GS
=
±
10 V; V
DS
= 0 V;
Zero gate voltage drain
V
DS
= 25 V; V
GS
= 0 V;
current
T
j
= 175˚C
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
Internal source inductance
Input capacitance
Output capacitance
Feedback capacitance
I
D
= 75 A; V
DD
= 15 V; V
GS
= 5 V
MIN.
25
22
1
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
1.5
-
-
3.5
4
-
-
0.02
0.05
-
97
20
39
45
220
435
320
3.5
4.5
7.5
6000
1700
1400
-
-
2
-
2.3
4
5
5.4
9.25
100
10
500
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
mΩ
mΩ
mΩ
mΩ
nA
µA
µA
nC
nC
nC
ns
ns
ns
ns
nH
nH
nH
pF
pF
pF
I
GSS
I
DSS
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
L
d
L
d
L
s
C
iss
C
oss
C
rss
V
DD
= 15 V; R
D
= 1.2
Ω
V
GS
= 5 V; R
G
= 5.6
Ω
Resistive load
Measured tab to centre of die
Measured from drain lead to centre of die
(SOT78 package only)
Measured from source lead to source
bond pad
V
GS
= 0 V; V
DS
= 20 V; f = 1 MHz
January 2000
2
Rev 1.200
Philips Semiconductors
Product specification
N-channel logic level TrenchMOS transistor
PSMN004-25B, PSMN004-25P
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25˚C unless otherwise specified
SYMBOL PARAMETER
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous source current
(body diode)
Pulsed source current (body
diode)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
CONDITIONS
MIN.
-
-
I
F
= 25 A; V
GS
= 0 V
I
F
= 75 A; V
GS
= 0 V
I
F
= 20 A; -dI
F
/dt = 100 A/µs;
V
GS
= 0 V; V
R
= 25 V
-
-
-
-
TYP. MAX. UNIT
-
-
0.85
1.1
400
1
75
240
1.2
-
-
-
A
A
V
ns
µC
January 2000
3
Rev 1.200
Philips Semiconductors
Product specification
N-channel logic level TrenchMOS transistor
PSMN004-25B, PSMN004-25P
Normalised Power Derating, PD (%)
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
Mounting Base temperature, Tmb (C)
150
175
1
Transient thermal impedance, Zth j-mb (K/W)
D = 0.5
0.2
0.1
0.1
0.05
0.02
P
D
single pulse
T
tp
D = tp/T
0.01
0.001
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
Pulse width, tp (s)
Fig.1. Normalised power dissipation.
PD% = 100⋅P
D
/P
D 25 ˚C
= f(T
mb
)
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Drain Current, ID (A)
10 V
5V
4.5 V
VGS = 2.6 V
2.8 V
Tj = 25 C
Normalised Current Derating, ID (%)
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
Mounting Base temperature, Tmb (C)
150
175
100
90
80
70
60
50
40
30
20
10
0
0
2.4 V
2.2 V
2V
1.8 V
0.2
0.4
0.6
0.8
1
1.2
1.4
Drain-Source Voltage, VDS (V)
1.6
1.8
2
Fig.2. Normalised continuous drain current.
ID% = 100⋅I
D
/I
D 25 ˚C
= f(T
mb
)
Fig.5. Typical output characteristics, T
j
= 25 ˚C.
I
D
= f(V
DS
)
1000
Peak Pulsed Drain Current, IDM (A)
RDS(on) = VDS/ ID
tp = 10 us
100 us
0.02
0.018
0.016
0.014
1 ms
D.C.
10 ms
100 ms
0.012
0.01
0.008
0.006
0.004
0.002
Drain-Source On Resistance, RDS(on) (Ohms)
2V
2.2 V
2.4 V
2.6 V
100
2.8 V
10
5V
4.5 V
VGS = 10V
Tj = 25 C
0
10
20
30
40
50
60
Drain Current, ID (A)
70
80
90
100
1
1
10
Drain-Source Voltage, VDS (V)
100
0
Fig.3. Safe operating area. T
mb
= 25 ˚C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.6. Typical on-state resistance, T
j
= 25 ˚C.
R
DS(ON)
= f(I
D
)
January 2000
4
Rev 1.200
Philips Semiconductors
Product specification
N-channel logic level TrenchMOS transistor
PSMN004-25B, PSMN004-25P
Drain current, ID (A)
100
90
80
70
60
50
40
30
20
10
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
2.2 2.4 2.6 2.8
3
Gate-source voltage, VGS (V)
Tj = 25 C
VDS > ID X RDS(ON)
Threshold Voltage, VGS(TO) (V)
2.25
2
1.75
1.5
typical
1.25
1
minimum
maximum
175 C
0.75
0.5
0.25
0
-60
-40
-20
0
20
40
60
80
100
120
140
160
180
Junction Temperature, Tj (C)
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
)
Transconductance, gfs (S)
VDS > ID X RDS(ON)
120
Tj = 25 C
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Drain current, ID (A)
VDS = 5 V
1.0E-02
140
1.0E-01
100
80
60
40
175 C
1.0E-03
minimum
1.0E-04
typical
maximum
1.0E-05
20
0
0
10
20
30
40
50
60
70
Drain current, ID (A)
80
90
100
1.0E-06
0
0.5
1
1.5
2
Gate-source voltage, VGS (V)
2.5
3
Fig.8. Typical transconductance, T
j
= 25 ˚C.
g
fs
= f(I
D
)
Normalised On-state Resistance
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 ˚C; V
DS
= V
GS
2
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
100000
Capacitances, Ciss, Coss, Crss (pF)
10000
Ciss
Coss
Crss
1000
-60
-40
-20
0
20
40
60
80
100
Junction temperature, Tj (C)
120
140
160
180
0.1
1
10
Drain-Source Voltage, VDS (V)
100
Fig.9. Normalised drain-source on-state resistance.
R
DS(ON)
/R
DS(ON)25 ˚C
= f(T
j
)
Fig.12. Typical capacitances, C
iss
, C
oss
, C
rss
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
January 2000
5
Rev 1.200
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