CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
PARAMETER
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
I
D(ON)
I
GSS
r
DS(ON)
gfs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
Measured From the Drain
Lead, 2mm (0.08in) from
Package to Center of Die
Measured From the Source
Lead, 2mm (0.08in) from
Header to Source Bonding
Pad
Modified MOSFET
Symbol Showing the
Internal Device’s
Inductances
D
L
D
G
L
S
S
TEST CONDITIONS
I
D
= 250
µ
A, V
GS
= 0V (Figure 9)
V
GS
= V
DS
, I
D
= 250
µ
A
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 125
o
C
V
DS
> I
D(ON)
x r
DS(ON)
Max, V
GS
= 10V
V
GS
=
±
20V
I
D
= 0.6A, V
GS
= 10V (Figures 7, 8)
V
DS
> I
D(ON)
x r
DS(ON)MAX
, I
D
= 0.6A (Figure 11)
V
DD
= 0.5 x Rated BV
DSS
, I
D
≈
1.3A,
V
GS
= 10V, R
G
= 9.1
Ω
R
L
= 38.5
Ω
for V
DD
= 50V
MOSFET Switching Times are Essentially
Independent of Operating Temperature
V
GS
= 10V, I
D
= 1.3A, V
DS
= 0.8 x Rated BV
DSS
,
I
g(REF)
= 1.5mA (Figure 13)
Gate Charge is Essentially Independent of Operating
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