MB81C1001-10LC datasheet, PDF - EEWORLD Datasheet

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MB81C1001-10LC: DescriptionNibble Mode DRAM, 1MX1, 100ns, CMOS, CDIP18; Categorystorage storage; File Size690KB，22 Pages; ManufacturerFUJITSU; Websitehttp://edevice.fujitsu.com/fmd/en/index.html

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MB81C1001-10LC Overview

Nibble Mode DRAM, 1MX1, 100ns, CMOS, CDIP18

MB81C1001-10LC Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	FUJITSU
Parts packaging code	DIP
package instruction	DIP, DIP18,.3
Contacts	18
Reach Compliance Code	unknow
Maximum access time	100 ns
I/O type	SEPARATE
JESD-30 code	R-XDIP-T18
JESD-609 code	e0
memory density	1048576 bi
Memory IC Type	NIBBLE MODE DRAM
memory width	1
Number of terminals	18
word count	1048576 words
character code	1000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1MX1
Output characteristics	3-STATE
Package body material	CERAMIC
encapsulated code	DIP
Encapsulate equivalent code	DIP18,.3
Package shape	RECTANGULAR
Package form	IN-LINE
power supply	5 V
Certification status	Not Qualified
refresh cycle	512
Maximum standby current	0.00025 A
Maximum slew rate	0.055 mA
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Base Number Matches	1

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MB81C1001-10LC Related Products

	MB81C1001-10LC	MB81C1001-12LC	MB81C1001-10LPSZ	MB81C1001-10LPJ	MB81C1001-10LP	MB81C1001-70LC	MB81C1001-80LPJ
Description	Nibble Mode DRAM, 1MX1, 100ns, CMOS, CDIP18	Nibble Mode DRAM, 1MX1, 120ns, CMOS, CDIP18	Nibble Mode DRAM, 1MX1, 100ns, CMOS, PZIP20	Nibble Mode DRAM, 1MX1, 100ns, CMOS, PDSO20	Nibble Mode DRAM, 1MX1, 100ns, CMOS, PDIP18	Nibble Mode DRAM, 1MX1, 70ns, CMOS, CDIP18	Nibble Mode DRAM, 1MX1, 80ns, CMOS, PDSO20, PLASTIC, LCC-26/20
package instruction	DIP, DIP18,.3	DIP, DIP18,.3	ZIP, ZIP20,.1	SOJ, SOJ20/26,.34	DIP, DIP18,.3	DIP, DIP18,.3	SOJ,
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknown	unknown
Maximum access time	100 ns	120 ns	100 ns	100 ns	100 ns	70 ns	80 ns
JESD-30 code	R-XDIP-T18	R-XDIP-T18	R-PZIP-T20	R-PDSO-J20	R-PDIP-T18	R-XDIP-T18	R-PDSO-J20
memory density	1048576 bi	1048576 bi	1048576 bi	1048576 bi	1048576 bi	1048576 bit	1048576 bit
Memory IC Type	NIBBLE MODE DRAM	NIBBLE MODE DRAM	NIBBLE MODE DRAM	NIBBLE MODE DRAM	NIBBLE MODE DRAM	NIBBLE MODE DRAM	NIBBLE MODE DRAM
memory width	1	1	1	1	1	1	1
Number of terminals	18	18	20	20	18	18	20
word count	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words
character code	1000000	1000000	1000000	1000000	1000000	1000000	1000000
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	1MX1	1MX1	1MX1	1MX1	1MX1	1MX1	1MX1
Package body material	CERAMIC	CERAMIC	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	CERAMIC	PLASTIC/EPOXY
encapsulated code	DIP	DIP	ZIP	SOJ	DIP	DIP	SOJ
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	SMALL OUTLINE	IN-LINE	IN-LINE	SMALL OUTLINE
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	512	512	512	512	512	512	512
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	YES	NO	NO	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	J BEND	THROUGH-HOLE	THROUGH-HOLE	J BEND
Terminal pitch	2.54 mm	2.54 mm	1.27 mm	1.27 mm	2.54 mm	2.54 mm	1.27 mm
Terminal location	DUAL	DUAL	ZIG-ZAG	DUAL	DUAL	DUAL	DUAL
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	-
Maker	FUJITSU	FUJITSU	FUJITSU	FUJITSU	FUJITSU	FUJITSU	-
Parts packaging code	DIP	DIP	ZIP	LCC	DIP	DIP	-
Contacts	18	18	20	26/20	18	18	-
I/O type	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE	-
JESD-609 code	e0	e0	e0	e0	e0	e0	-
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	-
Encapsulate equivalent code	DIP18,.3	DIP18,.3	ZIP20,.1	SOJ20/26,.34	DIP18,.3	DIP18,.3	-
power supply	5 V	5 V	5 V	5 V	5 V	5 V	-
Maximum standby current	0.00025 A	0.00025 A	0.00025 A	0.00025 A	0.00025 A	0.00025 A	-
Maximum slew rate	0.055 mA	0.047 mA	0.055 mA	0.055 mA	0.055 mA	0.072 mA	-
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-
Base Number Matches	1	1	1	1	1	-	-

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