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MB81C1001-10LPJ

Description
Nibble Mode DRAM, 1MX1, 100ns, CMOS, PDSO20
Categorystorage    storage   
File Size690KB,22 Pages
ManufacturerFUJITSU
Websitehttp://edevice.fujitsu.com/fmd/en/index.html
Download Datasheet Parametric Compare View All

MB81C1001-10LPJ Overview

Nibble Mode DRAM, 1MX1, 100ns, CMOS, PDSO20

MB81C1001-10LPJ Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFUJITSU
Parts packaging codeLCC
package instructionSOJ, SOJ20/26,.34
Contacts26/20
Reach Compliance Codeunknow
Maximum access time100 ns
I/O typeSEPARATE
JESD-30 codeR-PDSO-J20
JESD-609 codee0
memory density1048576 bi
Memory IC TypeNIBBLE MODE DRAM
memory width1
Number of terminals20
word count1048576 words
character code1000000
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX1
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeSOJ
Encapsulate equivalent codeSOJ20/26,.34
Package shapeRECTANGULAR
Package formSMALL OUTLINE
power supply5 V
Certification statusNot Qualified
refresh cycle512
Maximum standby current0.00025 A
Maximum slew rate0.055 mA
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationDUAL
Base Number Matches1

MB81C1001-10LPJ Related Products

MB81C1001-10LPJ MB81C1001-12LC MB81C1001-10LPSZ MB81C1001-10LP MB81C1001-10LC MB81C1001-70LC MB81C1001-80LPJ
Description Nibble Mode DRAM, 1MX1, 100ns, CMOS, PDSO20 Nibble Mode DRAM, 1MX1, 120ns, CMOS, CDIP18 Nibble Mode DRAM, 1MX1, 100ns, CMOS, PZIP20 Nibble Mode DRAM, 1MX1, 100ns, CMOS, PDIP18 Nibble Mode DRAM, 1MX1, 100ns, CMOS, CDIP18 Nibble Mode DRAM, 1MX1, 70ns, CMOS, CDIP18 Nibble Mode DRAM, 1MX1, 80ns, CMOS, PDSO20, PLASTIC, LCC-26/20
package instruction SOJ, SOJ20/26,.34 DIP, DIP18,.3 ZIP, ZIP20,.1 DIP, DIP18,.3 DIP, DIP18,.3 DIP, DIP18,.3 SOJ,
Reach Compliance Code unknow unknow unknow unknow unknow unknown unknown
Maximum access time 100 ns 120 ns 100 ns 100 ns 100 ns 70 ns 80 ns
JESD-30 code R-PDSO-J20 R-XDIP-T18 R-PZIP-T20 R-PDIP-T18 R-XDIP-T18 R-XDIP-T18 R-PDSO-J20
memory density 1048576 bi 1048576 bi 1048576 bi 1048576 bi 1048576 bi 1048576 bit 1048576 bit
Memory IC Type NIBBLE MODE DRAM NIBBLE MODE DRAM NIBBLE MODE DRAM NIBBLE MODE DRAM NIBBLE MODE DRAM NIBBLE MODE DRAM NIBBLE MODE DRAM
memory width 1 1 1 1 1 1 1
Number of terminals 20 18 20 18 18 18 20
word count 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words
character code 1000000 1000000 1000000 1000000 1000000 1000000 1000000
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
organize 1MX1 1MX1 1MX1 1MX1 1MX1 1MX1 1MX1
Package body material PLASTIC/EPOXY CERAMIC PLASTIC/EPOXY PLASTIC/EPOXY CERAMIC CERAMIC PLASTIC/EPOXY
encapsulated code SOJ DIP ZIP DIP DIP DIP SOJ
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE SMALL OUTLINE
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
refresh cycle 512 512 512 512 512 512 512
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V
surface mount YES NO NO NO NO NO YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form J BEND THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE J BEND
Terminal pitch 1.27 mm 2.54 mm 1.27 mm 2.54 mm 2.54 mm 2.54 mm 1.27 mm
Terminal location DUAL DUAL ZIG-ZAG DUAL DUAL DUAL DUAL
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible -
Maker FUJITSU FUJITSU FUJITSU FUJITSU FUJITSU FUJITSU -
Parts packaging code LCC DIP ZIP DIP DIP DIP -
Contacts 26/20 18 20 18 18 18 -
I/O type SEPARATE SEPARATE SEPARATE SEPARATE SEPARATE SEPARATE -
JESD-609 code e0 e0 e0 e0 e0 e0 -
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE -
Encapsulate equivalent code SOJ20/26,.34 DIP18,.3 ZIP20,.1 DIP18,.3 DIP18,.3 DIP18,.3 -
power supply 5 V 5 V 5 V 5 V 5 V 5 V -
Maximum standby current 0.00025 A 0.00025 A 0.00025 A 0.00025 A 0.00025 A 0.00025 A -
Maximum slew rate 0.055 mA 0.047 mA 0.055 mA 0.055 mA 0.055 mA 0.072 mA -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
Base Number Matches 1 1 1 1 1 - -
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