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XP151A11B0MR-12

Description
Power MOSFET
File Size291KB,5 Pages
Manufacturer
Download Datasheet View All

XP151A11B0MR-12 Overview

Power MOSFET

XP151A11B0MR-G
Power MOSFET
ETR1117_003
■GENERAL
DESCRIPTION
The XP151A11B0MR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching
characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-23 package makes high density mounting possible.
■APPLICATIONS
●Notebook
PCs
●Cellular
and portable phones
●On-board
power supplies
●Li-ion
battery systems
■FEATURES
Low On-State Resistance
: Rds(on) = 0.12Ω@ Vgs = 10V
: Rds(on) = 0.17Ω@ Vgs = 4.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage
: 4.5V
N-Channel Power MOSFET
DMOS Structure
Small Package
: SOT-23
Environmentally Friendly
: EU RoHS Compliant, Pb Free
■PIN
CONFIGURATION/
MARKING
■PRODUCT
NAMES
PRODUCTS
XP151A11B0MR
XP151A11B0MR-G
(*)
PACKAGE
SOT-23
SOT-23
ORDER UNIT
3,000/Reel
3,000/Reel
1 1 1 x
G:Gate
S:Source
D:Drain
(*)
The “-G” suffix denotes Halogen and Antimony free as well as
being fully RoHS compliant.
* x represents production lot number.
■EQUIVALENT
CIRCUIT
■ABSOLUTE
MAXIMUM RATINGS
Ta = 25℃
PARAMETER
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Channel Power Dissipation *
Channel Temperature
Storage Temperature
SYMBOL RATINGS UNITS
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
30
±20
1
4
1
0.5
150
-55~150
V
V
A
A
A
W
* When implemented on a ceramic PCB
1/5
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