DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
Data Sheet No. BRDB-2500P-1C
ADBD-2500P-1C
25 AMP SILICON BRIDGE RECTIFIERS
FEATURES
MECHANICAL SPECIFICATION
SERIES: DB2500P - DB2510P and ADB2504P - ADB2508P
VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM
MECHANICAL STRENGTH AND HEAT DISSIPATION
(Solder Voids: Typical < 2%, Max. < 10% of Die Area)
BUILT-IN STRESS RELIEF MECHANISM FOR
SUPERIOR RELIABILITY AND PERFORMANCE
INTEGRALLY MOLDED HEAT SINK PROVIDES VERY
LOW THERMAL RESISTANCE FOR MAXIMUM HEAT
DISSIPATION
Heat Sink
BH
Heat Sink
BH
Molded
Body
LT
LL
Molded
Body
LD
D1
HOLE FOR
#8 SCREW
HOLE FOR
#8 SCREW
UL RECOGNIZED - FILE #E124962
+
AC
D3 BL
)+
)+
+
_
RoHS COMPLIANT
MECHANICAL DATA
AC
BL D1
+
D1
AC
D2
_
_
AC
D1
BL
D2
Case: Case: Molded epoxy with integral heat sink
Epoxy carries a U/L Flammability rating of 94V-0
Terminals: Round silver plated copper pins or fast-on terminals
Soldering: Per MIL-STD 202 Method 208 guaranteed
Polarity: Marked on side of case
Mounting Position: Any. Through hole for #8 screw.
Max. mounting torque = 20 in-lb.
Weight: Fast-on Terminals - 0.7 Ounces (20.0 Grams)
Wire Leads - 0.55 Ounces (16.0 Grams)
SYM
BL
BH
D1
D2
D3
LT
BL
MILLIMETERS
MIN
INCHES
SYM
BL
BH
D1
D2
LL
MILLIMETERS
MIN
INCHES
28.4
9.6
15.7
17.5
13.5
n/a
MAX
28.7
10.2
16.7
18.5
14.5
MIN
1.12
0.38
0.62
0.69
0.53
n/a
MAX
1.13
0.40
0.66
0.73
0.57
0.6
28.4
9.6
17.5
10.9
20.6
MAX
28.7
10.2
18.5
11.9
n/a
MIN
1.12
0.38
0.69
0.43
0.81
0.039
MAX
1.13
0.40
0.73
0.47
n/a
15.2
LD
1.0
1.1
0.042
Suffix "T" indicates FAST-ON TERMINALS
Suffix "W" indicates WIRE LEADS
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive loads, derate current by 20%.
PARAMETER (TEST CONDITIONS)
Series Number
Maximum DC Blocking Voltage
Working Peak Reverse Voltage
Maximum Peak Recurrent Reverse Voltage
RMS Reverse Voltage
Peak Forward Surge Current. Single 60Hz Half-Sine Wave
Superimposed on Rated Load (JEDEC Method). T
J
= 125
O
C
Average Forward Rectified Current @ T
C
= 75 C
Junction Temperature Range
Storage Temperature Range
Mimimum Avalanche Voltage
Maximum Avalanche Voltage
Maximum Forward Voltage (Per Diode) at 12.5 Amps DC
o
o
RATINGS
SYMBOL
CONTROLLED
AVALANCHE
NON-CONTROLLED
AVALANCHE
UNITS
ADB ADB ADB DB
DB
DB
DB
DB
DB
DB
2504P 2506P 2508P 2500P 2501P 2502P 2504P 2506P 2508P 2510P
V
RM
V
RWM
V
RRM
V
R (RMS)
I
FSM
I
O
T
J
T
STG
V
(BR) Min
V
(BR) Max
V
FM
I
RM
V
ISO
R
G
JC
@ T
A
= 25 C
o
@T
A
= 125 C
See Note 1
See Note 1
1.05
1
50
2500
1.2
o
400
600
800
50
100
200
400
600
800 1000
VOLTS
280
420
560
35
70
140
500
25
280
420
560
700
AMPS
-55 to +150
-55 to +150
n/a
n/a
°C
VOLTS
Maximum Reverse Current at Rated V
RM
mA
VOLTS
C/W
3.01 25dbp
Minimum Insulation Breakdown Voltage (Circuit to Case)
Typical Thermal Resistance, Junction to Case
NOTES: (1) These bridges exhibit the avalanche characteristic at breakdown. If your application requires a specific breakdown voltage range, please contact us.
E41
DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
Data Sheet No. BRDB-2500P-2C
ABDB-2500P-2C
25 AMP SILICON BRIDGE RECTIFIERS
RATING & CHARACTERISTIC CURVES FOR SERIES DB2500P - DB2510P and SERIES ADB2504P - ADB2508P
30
1000
Peak Forward Surge Current
(Amperes)
Average Forward Current, Io
(Amperes)
25
60Hz Resistive or
Inductive Loads
T
J
= 125 C
o
20
15
Bridge Mounted on 5 x 6 x 4.9" Thick
(12.7 x 15.2 x 12.4cm) Finned Al. Plate
10
5
50
0
1
10
100
0
50
75
100
125
150
Case Temperature, C
FIGURE 1. FORWARD CURRENT DERATING CURVE
o
Number of Cycles at 60 Hz
FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
1000
10
T
J
= 125 C
O
Instantaneous Forward Current
(Amperes)
Instantaneous Reverse Current, I
(Microamperes)
100
1.0
10
1.0
T
J
= 25 C
Pulse Width = 300
m
Sec
1%Duty Cycle
o
0.1
T
J
= 25 C
O
0.1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
.01
0
20
40
60
80
100
120
140
Instantaneous Forward Voltage (Volts)
FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE
Percent of Rated Peak Reverse Voltage
FIGURE 4. TYPICAL REVERSE CHARACTERISTICS
E42
3.01 25db
Microcontroller MCU
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