Power Field-Effect Transistor, 14A I(D), 200V, 0.315ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Objectid | 1544044660 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Shell connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 200 V |
| Maximum drain current (Abs) (ID) | 14 A |
| Maximum drain current (ID) | 14 A |
| Maximum drain-source on-resistance | 0.315 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-254AA |
| JESD-30 code | R-MSFM-P3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | METAL |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | P-CHANNEL |
| Maximum power dissipation(Abs) | 50 W |
| Maximum pulsed drain current (IDM) | 42 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | TIN LEAD |
| Terminal form | PIN/PEG |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
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