EEWORLDEEWORLDEEWORLD

Part Number

Search

5962-0520801QXC

Description
Standard SRAM, 512KX8, 17ns, CMOS
Categorystorage    storage   
File Size352KB,14 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Download Datasheet Parametric View All

5962-0520801QXC Overview

Standard SRAM, 512KX8, 17ns, CMOS

5962-0520801QXC Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction0.500 INCH, DFP-36
Reach Compliance Code_compli
ECCN code3A001.A.2.C
Maximum access time17 ns
I/O typeCOMMON
JESD-30 codeR-XDFP-F36
JESD-609 codee4
memory density4194304 bi
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals36
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize512KX8
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDFP
Encapsulate equivalent codeFL36,.5
Package shapeRECTANGULAR
Package formFLATPACK
Parallel/SerialPARALLEL
power supply3.3 V
Certification statusQualified
Filter levelMIL-PRF-38535 Class Q
Maximum seat height3.05 mm
Maximum standby current0.0015 A
Minimum standby current2 V
Maximum slew rate0.18 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfaceGOLD
Terminal formFLAT
Terminal pitch1.27 mm
Terminal locationDUAL
width12.195 mm
Base Number Matches1
Features
Operating Voltage: 3.3V, 5V tolerant
Access Time:
– 17 ns
– 15 ns
Very Low Power Consumption
– Active: 610 mW (Max) @ 17 ns
(1)
, 540 mW (Max) @ 25 ns
– Standby: 3.3 mW (Typ)
Wide Temperature Range: -55 to +125°C
TTL-Compatible Inputs and Outputs
Asynchronous
Designed on 0.25 µm Radiation Hardened Process
No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm
2
@125°C
Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019
500 Mils Wide FP36 Package
ESD Better than 2000V
Quality Grades: ESCC with 9301/052, QML-Q or V with smd 5962-05208
1. 650 mW (Max) @ 15 ns
Note:
Description
The AT60142FT is a very low power CMOS static RAM organized as 512K x 8 bits.
Atmel brings the solution to applications where fast computing is as mandatory as low
consumption, such as aerospace electronics, portable instruments, or embarked
systems.
Utilizing an array of six transistors (6T) memory cells, the AT60142FT combines an
extremely low standby supply current (Typical value = 1 mA) with a fast access time at
15 ns over the full military temperature range. The high stability of the 6T cell provides
excellent protection against soft errors due to noise.
The AT60142FT is processed according to the methods of the latest revision of the
MIL PRF 38535 or ESCC 9000.
It is produced on a radiation hardened 0.25 µm CMOS process.
Rad Hard
512K x 8
5V Tolerant
Very Low Power
CMOS SRAM
AT60142FT
7726C–AERO–05/10
1

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 648  995  1671  2385  2867  14  21  34  49  58 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号