AP55T10GI-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Lower Gate Charge
▼
Fast Switching Characteristics
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
100V
16.5mΩ
31.7A
S
Description
AP55T10 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The TO-220CFM package is widely preferred for all commercial-industrial
through hole applications. The mold compound provides a high isolation
voltage capability and low thermal resistance between the tab and the
external heat-sink.
G
D
S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
100
+20
31.7
20
120
36.7
1.92
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
3.4
65
Units
℃/W
℃/W
1
201208271
Data and specifications subject to change without notice
AP55T10GI-HF
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=24A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=24A
V
DS
=80V, V
GS
=0V
V
GS
= +20V, V
DS
=0V
I
D
=24A
V
DS
=80V
V
GS
=10V
V
DS
=50V
I
D
=10A
R
G
=3.3Ω
V
GS
=10V
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Min.
100
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
44
-
-
70
16
34
19
27
37
17
320
200
1
Max. Units
-
16.5
5
-
25
+100
112
-
-
-
-
-
-
-
-
2
V
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
o
3400 5440
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Test Conditions
I
S
=24A, V
GS
=0V
I
S
=10A, V
GS
=0V
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
70
250
Max. Units
1.3
-
-
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP55T10GI-HF
160
120
T
C
= 25 C
o
10V
9.0V
8.0V
I
D
, Drain Current (A)
T
C
= 150
o
C
100
I
D
, Drain Current (A)
120
10V
9.0V
8.0V
7.0V
80
80
7.0V
60
V
G
= 6.0V
40
40
V
G
= 6.0V
20
0
0
4
8
12
16
20
0
0
4
8
12
16
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
2.8
I
D
=1mA
2.4
1.1
I
D
=24A
V
G
=10V
Normalized R
DS(ON)
Normalized BV
DSS
2.0
1
1.6
1.2
0.9
0.8
0.8
-50
0
50
100
150
0.4
-50
0
50
100
150
T
j
, Junction Temperature ( C)
o
T
j
, Junction Temperature ( C)
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
40
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
I
D
=250uA
20
Normalized V
GS(th)
1.4
30
1.2
I
S
(A)
0.8
T
j
=150
o
C
T
j
=25
o
C
10
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
,Junction Temperature (
o
C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP55T10GI-HF
12
5000
f=1.0MHz
10
I
D
= 24 A
V
DS
=80V
4000
V
GS
, Gate to Source Voltage (V)
8
C (pF)
C
iss
3000
6
2000
4
1000
2
0
0
30
60
90
0
1
5
9
13
17
21
25
C
oss
C
rss
29
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Duty factor=0.5
Normalized Thermal Response (R
thjc
)
0.2
100
I
D
(A)
Operation in this area
limited by R
DS(ON)
10us
100us
1ms
10ms
100ms
0.1
0.1
0.05
10
0.02
0.01
P
DM
0.01
Single Pulse
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
1
T
c
=25 C
Single Pulse
0.1
0.01
0.1
1
10
100
o
1s
DC
1000
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
40
V
G
I
D
, Drain Current (A)
30
Q
G
10V
20
Q
GS
Q
GD
10
Charge
0
25
50
75
100
125
150
Q
T
C
, Case Temperature (
o
C )
Fig 11. Maximum Continuous Drain
Current v.s. Case Temperature
Fig 12. Gate Charge Waveform
4
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