BF1208D datasheet, PDF - EEWORLD Datasheet

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BF1208D: DescriptionDual N-channel dual gate MOSFET; File Size240KB，22 Pages; ManufacturerQuanzhou Jinmei Electronic Co.,Ltd.; Websitehttp://www.jmnic.com/

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BF1208D Overview

Dual N-channel dual gate MOSFET

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BF1208D

Dual N-channel dual gate MOSFET

Rev. 01 — 16 May 2007

Product data sheet

1. Product proﬁle

1.1 General description

The BF1208D is a combination of two dual gate MOSFET ampliﬁers with shared source

and gate2 leads and an integrated switch. The integrated switch is operated by the gate1

bias of ampliﬁer B.

The source and substrate are interconnected. Internal bias circuits enable

DC stabilization and a very good cross modulation performance during Automatic Gain

Control (AGC). Integrated diodes between the gates and source protect against excessive

input voltage surges. The transistor has a SOT666 micro-miniature plastic package.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features

Two low noise gain controlled ampliﬁers in a single package. One with a fully

integrated bias and one with a partly integrated bias

Internal switch to save external components

Superior cross modulation performance during AGC

High forward transfer admittance

High forward transfer admittance to input capacitance ratio

1.3 Applications

Gain controlled low noise ampliﬁers for VHF and UHF applications with 5 V supply

voltage

digital and analog television tuners

professional communication equipment

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