ZXMHC3A01T8
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE
SUMMARY
N-Channel = V
(BR)DSS
= 30V : R
DS(on)
= 0.12 ; I
D
= 3.1A
P-Channel = V
(BR)DSS
= -30V : R
DS(on)
= 0.21 ; I
D
= -2.3A
DESCRIPTION
This new generation of trench MOSFETs from Zetex
utilizes a unique structure that combines the benefits of
low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage,
power management applications.
SM8
FEATURES
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
Single SM-8 surface mount package
D
1
, D
2
D
3
, D
4
G
1
S
1
S
4
G
4
APPLICATIONS
•
Single phase DC fan motor drive
G
2
S
2
S
3
G
3
ORDERING INFORMATION
DEVICE
ZXMHC3A01T8TA
ZXMHC3A01T8TC
REEL
SIZE
7”
13”
TAPE
WIDTH
12mm
12mm
QUANTITY
PER REEL
1,000 units
4,000 units
PINOUT
DEVICE MARKING
•
ZXMH
C3A01
Top View
DRAFT ISSUE E - APRIL 2004
1
SEMICONDUCTORS
ZXMHC3A01T8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current (V
GS
= 10V; T
A
=25°C)
(b)(d)
(V
GS
= 10V; T
A
=70°C)
(V
GS
= 10V; T
A
=25°C)
(a)(d)
Pulsed drain current
(c)
Continuous source current (body diode)
Pulsed source current (body diode)
(c)
Power dissipation at T
A
=25°C
Linear derating factor
Power dissipation at T
A
=25°C
Linear derating factor
(a) (d)
(b)
(b)(d)
SYMBOL
V
DSS
V
GS
I
D
N-Channel
30
±20
3.1
2.5
2.7
P-channel
-30
±20
-2.3
-1.8
-2.0
-10.8
-2.2
-10.8
1.3
UNIT
V
V
A
A
A
A
A
A
W
mW/°C
W
mW/°C
°C
I
DM
I
S
I
SM
P
D
P
D
T
j
, T
stg
14.5
2.3
14.5
10.4
(b) (d)
1.7
13.6
-55 to +150
Operating and storage temperature range
THERMAL RESISTANCE
PARAMETER
Junction to ambient
(a) (d)
Junction to ambient
(b) (d)
SYMBOL
R
JA
R
JA
VALUE
96
73
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t 10 sec.
(c) Repetitive rating on 50mm x 50mm x 1.6mm FR4, D= 0.02, pulse width 300 S - pulse width limited by maximum junction temperature. Refer
to transient thermal impedance graph.
(d) For device with one active die.
DRAFT ISSUE E - APRIL 2004
SEMICONDUCTORS
2
ZXMHC3A01T8
CHARACTERISTICS
DRAFT ISSUE E - APRIL 2004
3
SEMICONDUCTORS
ZXMHC3A01T8
N-channel
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
PARAMETER
STATIC
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage
Gate-source threshold voltage
Static drain-source on-state
resistance
(1)
Forward transconductance
(1) (3)
DYNAMIC
(3)
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
SD
t
rr
30
1.0
100
1.0
3.0
0.12
0.18
3.5
V
A
nA
V
I
D
= 250 A, V
GS
=0V
V
DS
=30V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
I
D
= 250 A, V
DS
=V
GS
V
GS
= 10V, I
D
= 2.5A
V
GS
= 4.5V, I
D
= 2.0A
S
V
DS
=4.5V, I
D
= 2.5A
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING
(2) (3)
190
38
20
pF
pF
pF
V
DS
= 25V, V
GS
=0V
f=1MHz
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate drain charge
SOURCE-DRAIN DIODE
Diode forward voltage
(1)
Reverse recovery time
(3)
Reverse recovery charge
(3)
1.7
2.3
6.6
2.9
3.9
0.6
0.9
ns
ns
ns
ns
nC
nC
nC
V
DS
= 15V, V
GS
= 10V
I
D
= 2.5A
V
DD
= 15V, I
D
= 2.5A
R
G
≅
6.0Ω, V
GS
= 10V
0.95
17.7
13.0
V
ns
nC
T
j
=25°C, I
S
= 1.7A,
V
GS
=0V
T
j
=25°C, I
S
= 2.5A,
di/dt=100A/ s
Q
rr
NOTES
(1) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
DRAFT ISSUE E - APRIL 2004
SEMICONDUCTORS
4
ZXMHC3A01T8
N-channel
TYPICAL CHARACTERISTICS
DRAFT ISSUE E - APRIL 2004
5
SEMICONDUCTORS
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