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ZXMHC3A01T8TA

Description
2.7 A, 30 V, 0.12 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size272KB,10 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Download Datasheet Parametric Compare View All

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ZXMHC3A01T8TA Overview

2.7 A, 30 V, 0.12 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET

ZXMHC3A01T8TA Parametric

Parameter NameAttribute value
Number of terminals8
Minimum breakdown voltage30 V
Processing package descriptionSM-8, 8 PIN
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureBRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE
Number of components4
transistor applicationsSWITCHING
Transistor component materialsSILICON
Channel typeN-CHANNEL AND P-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeGENERAL PURPOSE POWER
Maximum leakage current2.7 A
Maximum drain on-resistance0.1200 ohm
Maximum leakage current pulse14.5 A
ZXMHC3A01T8
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE
SUMMARY
N-Channel = V
(BR)DSS
= 30V : R
DS(on)
= 0.12 ; I
D
= 3.1A
P-Channel = V
(BR)DSS
= -30V : R
DS(on)
= 0.21 ; I
D
= -2.3A
DESCRIPTION
This new generation of trench MOSFETs from Zetex
utilizes a unique structure that combines the benefits of
low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage,
power management applications.
SM8
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Single SM-8 surface mount package
D
1
, D
2
D
3
, D
4
G
1
S
1
S
4
G
4
APPLICATIONS
Single phase DC fan motor drive
G
2
S
2
S
3
G
3
ORDERING INFORMATION
DEVICE
ZXMHC3A01T8TA
ZXMHC3A01T8TC
REEL
SIZE
7”
13”
TAPE
WIDTH
12mm
12mm
QUANTITY
PER REEL
1,000 units
4,000 units
PINOUT
DEVICE MARKING
ZXMH
C3A01
Top View
DRAFT ISSUE E - APRIL 2004
1
SEMICONDUCTORS

ZXMHC3A01T8TA Related Products

ZXMHC3A01T8TA ZXMHC3A01T8 ZXMHC3A01T8TC
Description 2.7 A, 30 V, 0.12 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET 2.7 A, 30 V, 0.12 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET 2.7 A, 30 V, 0.12 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
Number of terminals 8 8 8
Minimum breakdown voltage 30 V 30 V 30 V
Processing package description SM-8, 8 PIN SM-8, 8 PIN SM-8, 8 PIN
Lead-free Yes Yes Yes
EU RoHS regulations Yes Yes Yes
China RoHS regulations Yes Yes Yes
state ACTIVE ACTIVE ACTIVE
packaging shape RECTANGULAR RECTANGULAR RECTANGULAR
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes Yes
Terminal form GULL WING GULL WING GULL WING
terminal coating MATTE TIN MATTE TIN MATTE TIN
Terminal location DUAL DUAL DUAL
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
structure BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE
Number of components 4 4 4
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Channel type N-CHANNEL AND P-CHANNEL N-CHANNEL AND P-CHANNEL N-CHANNEL AND P-CHANNEL
field effect transistor technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
operating mode ENHANCEMENT ENHANCEMENT ENHANCEMENT
Transistor type GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER
Maximum leakage current 2.7 A 2.7 A 2.7 A
Maximum drain on-resistance 0.1200 ohm 0.1200 ohm 0.1200 ohm
Maximum leakage current pulse 14.5 A 14.5 A 14.5 A
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