irfe430 datasheet, PDF - EEWORLD Datasheet

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irfe430: DescriptionHEXFET TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size123KB，8 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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irfe430 Overview

HEXFET TRANSISTOR

irfe430 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Maker	International Rectifier （ Infineon ）
Parts packaging code	LCC
package instruction	CHIP CARRIER, R-CQCC-N15
Contacts	18
Reach Compliance Code	unknow
Other features	HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)	0.31 mJ
Shell connection	SOURCE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (ID)	2.5 A
Maximum drain-source on-resistance	1.725 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-CQCC-N15
Number of components	1
Number of terminals	15
Operating mode	ENHANCEMENT MODE
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	11 A
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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Provisional Data Sheet No. PD - 9.1719

IRFE430

REPETITIVE AVALANCHE AND dv/dt RATED

JANTX2N6802U

HEXFET

TRANSISTOR

JANTXV2N6802U

[REF:MIL-PRF-19500/557]

N-CHANNEL

500Volt, 1.50Ω, HEXFET

Ω

The leadless chip carrier (LCC) package represents

the logical next step in the continual evolution of

surface mount technology. The LCC provides

designers the extra flexibility they need to increase

circuit board density. International Rectifier has

engineered the LCC package to meet the specific

needs of the power market by increasing the size of

the bottom source pad, thereby enhancing the

thermal and electrical performance. The lid of the

package is grounded to the source to reduce RF

interference.

HEXFET transistors also feature all of the well-es-

tablished advantages of MOSFETs, such as volt-

age control, very fast switching, ease of paralleling

and electrical parameter temperature stability. They

are well-suited for applications such as switching

power supplies, motor controls, inverters, choppers,

audio amplifiers and high-energy pulse circuits, and

virtually any application where high reliability is re-

quired.

Product Summary

Part Number

IRFE430

DSS

500V

DS(on)

1.50Ω

2.5A

Features:

Hermetically Sealed

Simple Drive Requirements

Ease of Paralleling

Small footprint

Surface Mount

Lightweight

Absolute Maximum Ratings

Parameter

ID @ VGS = 10V, TC = 25°C

ID @ VGS = 10V, TC = 100°C

IDM

PD @ TC = 25°C

VGS

EAS

dv/dt

TSTG

Continuous Drain Current

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

Storage Temperature Range

Surface Temperature

Weight

IRFE430, JANTX-, JANTXV-, 2N6802U

Units

2.5

1.5

0.20

±20

0.31

6.2

-55 to 150

300 ( for 5 seconds)

0.42 (typical)

W/K

V/ns

12/3097

irfe430 Related Products

	irfe430	JANTX2N6802U	JANTXV2N6802U
Description	HEXFET TRANSISTOR	HEXFET TRANSISTOR	HEXFET TRANSISTOR
Is it lead-free?	Contains lead	Contains lead	Contains lead
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
Parts packaging code	LCC	LCC	LCC
package instruction	CHIP CARRIER, R-CQCC-N15	CHIP CARRIER, R-CQCC-N15	CHIP CARRIER, R-CQCC-N15
Contacts	18	18	18
Reach Compliance Code	unknow	unknow	unknow
Avalanche Energy Efficiency Rating (Eas)	0.31 mJ	0.31 mJ	0.31 mJ
Shell connection	SOURCE	SOURCE	SOURCE
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V	500 V	500 V
Maximum drain current (ID)	2.5 A	2.5 A	2.5 A
Maximum drain-source on-resistance	1.725 Ω	1.725 Ω	1.725 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-CQCC-N15	R-CQCC-N15	R-CQCC-N15
Number of components	1	1	1
Number of terminals	15	15	15
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	11 A	11 A	11 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal form	NO LEAD	NO LEAD	NO LEAD
Terminal location	QUAD	QUAD	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Maximum operating temperature	-	150 °C	150 °C
Guideline	-	MIL-19500/557	MIL-19500/557

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