BB405B113 datasheet, PDF - EEWORLD Datasheet

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BB405B113: DescriptionDIODE UHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-34, Variable Capacitance Diode; CategoryDiscrete semiconductor diode; File Size63KB，2 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BB405B113 Overview

DIODE UHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-34, Variable Capacitance Diode

BB405B113 Parametric

Parameter Name	Attribute value
package instruction	O-LALF-W2
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	3% MATCHED SETS AVAILABLE
Minimum breakdown voltage	30 V
Shell connection	ISOLATED
Configuration	SINGLE
Minimum diode capacitance ratio	7.6
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
frequency band	ULTRA HIGH FREQUENCY
JEDEC-95 code	DO-34
JESD-30 code	O-LALF-W2
Number of components	1
Number of terminals	2
Maximum operating temperature	100 °C
Minimum operating temperature	-55 °C
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Certification status	Not Qualified
Maximum reverse current	0.01 µA
Reverse test voltage	28 V
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Base Number Matches	1

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	BB405B113	BB405B116	BB405B136	BB405B133	BB405B143	BB405B153
Description	DIODE UHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-34, Variable Capacitance Diode	DIODE UHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-34, Variable Capacitance Diode	DIODE UHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-34, Variable Capacitance Diode	DIODE UHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-34, Variable Capacitance Diode	DIODE UHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-34, Variable Capacitance Diode	DIODE UHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-34, Variable Capacitance Diode
package instruction	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2
Reach Compliance Code	unknow	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	3% MATCHED SETS AVAILABLE	3% MATCHED SETS AVAILABLE	3% MATCHED SETS AVAILABLE	3% MATCHED SETS AVAILABLE	3% MATCHED SETS AVAILABLE	3% MATCHED SETS AVAILABLE
Minimum breakdown voltage	30 V	30 V	30 V	30 V	30 V	30 V
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum diode capacitance ratio	7.6	7.6	7.6	7.6	7.6	7.6
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE
frequency band	ULTRA HIGH FREQUENCY	ULTRA HIGH FREQUENCY	ULTRA HIGH FREQUENCY	ULTRA HIGH FREQUENCY	ULTRA HIGH FREQUENCY	ULTRA HIGH FREQUENCY
JEDEC-95 code	DO-34	DO-34	DO-34	DO-34	DO-34	DO-34
JESD-30 code	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2
Number of components	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2
Maximum operating temperature	100 °C	100 °C	100 °C	100 °C	100 °C	100 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Package body material	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum reverse current	0.01 µA	0.01 µA	0.01 µA	0.01 µA	0.01 µA	0.01 µA
Reverse test voltage	28 V	28 V	28 V	28 V	28 V	28 V
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Maker	-	-	NXP	NXP	NXP	NXP

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