FMM1061VJ
GaAs MMIC
FEATURES
• Operation to 6.0 GHz
• Input Frequency divide by 4, OUT and OUT
• -5V (or+5V) DC Single Power Supply
• External 50 ohm Load Driving Capability
• Small 10 pin Hermetic SMT-10 Package (VJ)
• Tape and Reel available
DESCRIPTION
The FMM1061VJ is a GaAs Microwave Static Frequency Divider
designed for dividing an input signal by 4 over a frequency range
from 2.0 to 6.0 GHz. This part is designed for Microwave Frequency
Synthesizer and Phase-Locked Oscillator applications.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Parameter
Supply Voltage
Input Voltage
Input Power
Storage Temperature
Power Dissipation
Symbol
Vss
Vin
Pin
Tstg
PD
Ratings
-7.0 to 0
Vss to 0
+13.0
-55 to +125
1.0
Unit
V
V
dBm
°C
W
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Ambient Temperature
Symbol
Vss
Ta
Min.
-5.5
-30
Limit
Typ.
-5.0
-
Max.
-4.5
+70
Unit
V
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta = 25°C, Vss = -5.0V)
Parameter
Power Supply Current
Operating Frequency
Output Power
CASE STYLE:
VJ
Symbol
Iss
Condition
Min.
-
Pin = 0~10dBm
2.0
0
Limit
Typ. Max.
100
-
4
-
6.0
-
Unit
mA
GHz
dBm
f
in
Po
Edition 1.1
August 1999
1
FMM1061VJ
GaAs MMIC
Case Style “VJ”
1.2±0.2
(0.047)
7.2±0.2
(0.283)
4.8±0.2
(0.189)
5
4
3
10-0.38
(0.015)
6-1.27
(0.050)
1.2±0.2
(0.047)
3.8
(0.150)
2.8
(0.110)
6.3±0.2
(0.248)
3.9±0.2
(0.154)
6
7
2
1
8
9
10
INDEX
LEAD ASSIGNMENT
0.15
(0.006)
Lead
1.
2.
3.
4.
5.
Symbol
VDD
GND
IN
GND
IN
Lead
6.
7.
8.
9.
10.
1.9
(0.075)
2.9
(0.114)
Symbol
Vss
GND
OUT
GND
OUT
Unit: mm(inches)
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS EUROPE, GmbH
Quantum Devices Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain
gallium arsenide
(GaAs)
which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
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