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5962-9560001MUA

Description
Standard SRAM, 512KX8, 45ns, CMOS, CDSO32, CERAMIC, SOJ-32
Categorystorage    storage   
File Size81KB,2 Pages
ManufacturerCypress Semiconductor
Download Datasheet Parametric Compare View All

5962-9560001MUA Overview

Standard SRAM, 512KX8, 45ns, CMOS, CDSO32, CERAMIC, SOJ-32

5962-9560001MUA Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeSOJ
package instructionCERAMIC, SOJ-32
Contacts32
Reach Compliance Code_compli
ECCN code3A001.A.2.C
Maximum access time45 ns
I/O typeCOMMON
JESD-30 codeR-CDSO-J32
JESD-609 codee0
length20.955 mm
memory density4194304 bi
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals32
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize512KX8
Output characteristics3-STATE
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeSOJ
Encapsulate equivalent codeSOJ32,.44
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Filter levelMIL-STD-883
Maximum seat height4.064 mm
Maximum standby current0.025 A
Minimum standby current4.5 V
Maximum slew rate0.225 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb) - hot dipped
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width11.1506 mm
Base Number Matches1
5962-95600:5/97
Revision: May 8, 1997
PRELIMINARY
5962-95600
512K x 8 Static RAM
Features
• High speed
— t
AA
= 20/25/35/45 ns
• Low active power
• Low CMOS standby power
• 2.0V Data Retention (2.0mA at 2.0V retention)
• 5V
±
10% Power Supply
• TTL-compatible inputs and outputs
• Operating temperature range (T
C
)
— T
C
= -55°C to +125°C
• Ceramic Package: 32-Pin 400mil SOJ
• Compliant to SMD 5962-95600
is provided by an active LOW chip enable (CE), an active LOW
output enable (OE), and three-state drivers. Writing to the de-
vice is accomplished by taking chip enable (CE) and write en-
able (WE) inputs LOW. Data on the eight I/O pins (I/O
0
through
I/O
7
) is then written into the location specified on the address
pins (A
0
through A
18
).
Reading from the device is accomplished by taking chip en-
able (CE) and output enable (OE) LOW while forcing write en-
able (WE) HIGH. Under these conditions, the contents of the
memory location specified by the address pins will appear on
the I/O pins.
The eight input/output pins (I/O
0
through I/O
7
) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), or during a write
operation (CE LOW, and WE LOW).
The 5962-95600 is available in a standard 400-mil-wide 32-pin
ceramic SOJ package.
Functional Description
The 5962-95600 is a high-performance CMOS static RAM or-
ganized as 524,288 words by 8 bits. Easy memory expansion
Logic Block Diagram
Pin Configuration
SOJ
Top View
A
18
A
16
A
14
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
I/O
0
I/O
1
I/O
2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
CC
A
15
A
17
WE
A
13
A
8
A
9
A
11
OE
A
10
CE
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
I/O
0
INPUT BUFFER
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
A
10
I/O
1
ROW DECODER
I/O
2
SENSE AMPS
512K x 8
ARRAY
I/O
3
I/O
4
I/O
5
5962-95600–2
CE
WE
COLUMN
DECODER
POWER
DOWN
I/O
6
I/O
7
A
11
A
12
A
13
A
14
A
15
A
16
A
17
A
18
OE
5962-95600–1
Selection Guide
5962-95600
Device Types
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum TTL Standby Current (mA)
Maximum CMOS Standby Current (mA)
Maximum Data-retention current (mA)
Shaded areas contain advance information
01 - 04
05 - 08
05 - 08
04 / 08
20
225
60
25
10
2
03 / 07
25
225
60
25
10
2
02 / 06
35
225
60
25
10
2
01 / 05
45
225
60
25
10
2
Cypress Semiconductor Corporation
3901 North First Street
San Jose
CA 95134
408-943-2600
May 1997

5962-9560001MUA Related Products

5962-9560001MUA 5962-9560006MUA 5962-9560005MUA 5962-9560004MUA 5962-9560007MUA 5962-9560002MUA 5962-9560008MUA
Description Standard SRAM, 512KX8, 45ns, CMOS, CDSO32, CERAMIC, SOJ-32 Standard SRAM, 512KX8, 35ns, CMOS, CDSO32, CERAMIC, SOJ-32 Standard SRAM, 512KX8, 45ns, CMOS, CDSO32, CERAMIC, SOJ-32 Standard SRAM, 512KX8, 20ns, CMOS, CDSO32, CERAMIC, SOJ-32 Standard SRAM, 512KX8, 25ns, CMOS, CDSO32, CERAMIC, SOJ-32 Standard SRAM, 512KX8, 35ns, CMOS, CDSO32, CERAMIC, SOJ-32 Standard SRAM, 512KX8, 20ns, CMOS, CDSO32, CERAMIC, SOJ-32
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Parts packaging code SOJ SOJ SOJ SOJ SOJ SOJ SOJ
package instruction CERAMIC, SOJ-32 CERAMIC, SOJ-32 CERAMIC, SOJ-32 CERAMIC, SOJ-32 CERAMIC, SOJ-32 CERAMIC, SOJ-32 CERAMIC, SOJ-32
Contacts 32 32 32 32 32 32 32
Reach Compliance Code _compli not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant
ECCN code 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C
Maximum access time 45 ns 35 ns 45 ns 20 ns 25 ns 35 ns 20 ns
I/O type COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 code R-CDSO-J32 R-CDSO-J32 R-CDSO-J32 R-CDSO-J32 R-CDSO-J32 R-CDSO-J32 R-CDSO-J32
JESD-609 code e0 e0 e0 e0 e0 e0 e0
length 20.955 mm 20.955 mm 20.955 mm 20.955 mm 20.955 mm 20.955 mm 20.955 mm
memory density 4194304 bi 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 8 8 8 8 8 8 8
Number of functions 1 1 1 1 1 1 1
Number of terminals 32 32 32 32 32 32 32
word count 524288 words 524288 words 524288 words 524288 words 524288 words 524288 words 524288 words
character code 512000 512000 512000 512000 512000 512000 512000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
organize 512KX8 512KX8 512KX8 512KX8 512KX8 512KX8 512KX8
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
encapsulated code SOJ SOJ SOJ SOJ SOJ SOJ SOJ
Encapsulate equivalent code SOJ32,.44 SOJ32,.44 SOJ32,.44 SOJ32,.44 SOJ32,.44 SOJ32,.44 SOJ32,.44
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
power supply 5 V 5 V 5 V 5 V 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Filter level MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883
Maximum seat height 4.064 mm 4.064 mm 4.064 mm 4.064 mm 4.064 mm 4.064 mm 4.064 mm
Maximum standby current 0.025 A 0.002 A 0.002 A 0.025 A 0.002 A 0.025 A 0.002 A
Minimum standby current 4.5 V 2 V 2 V 4.5 V 2 V 4.5 V 2 V
Maximum slew rate 0.225 mA 0.225 mA 0.225 mA 0.225 mA 0.225 mA 0.225 mA 0.225 mA
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V
surface mount YES YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY
Terminal surface Tin/Lead (Sn/Pb) - hot dipped Tin/Lead (Sn/Pb) - hot dipped Tin/Lead (Sn/Pb) - hot dipped Tin/Lead (Sn/Pb) - hot dipped Tin/Lead (Sn/Pb) - hot dipped Tin/Lead (Sn/Pb) - hot dipped Tin/Lead (Sn/Pb) - hot dipped
Terminal form J BEND J BEND J BEND J BEND J BEND J BEND J BEND
Terminal pitch 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
width 11.1506 mm 11.1506 mm 11.1506 mm 11.1506 mm 11.1506 mm 11.1506 mm 11.1506 mm
Base Number Matches 1 1 1 1 1 1 1
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