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KSK595HM

Description
Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, SOT-23, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size168KB,8 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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KSK595HM Overview

Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, SOT-23, 3 PIN

KSK595HM Parametric

Parameter NameAttribute value
MakerFairchild
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE AND RESISTOR
Maximum drain current (ID)0.001 A
FET technologyJUNCTION
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
KSK595
KSK595
Capacitor Microphone Applications
• Especially Suited for use in Audio, Telephone Capacitor Microphones
• Excellent Voltage Characteristic
• Excellent Transient Characteristic
3
2
1
SOT-23
1.Drain 2. Source 3. Gate
Si N-channel Junction FET
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
GDO
I
G
I
D
P
D
T
J
T
STG
Gate-Drain Voltage
Gate Current
Drain Current
Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
-20
10
1
100
150
-55 ~ 150
Units
V
mA
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
GDO
V
GS
(off)
I
DSS
lY
FS
l
C
iss
C
rss
Parameter
Gate-Drain Breakdown Voltage
Gate-Source Cut-off Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Test Condition
I
G
= -100uA
V
DS
=5V, I
D
=1µA
V
DS
=5V, V
GS
=0
V
DS
=5V, V
GS
=0, f=1MHz
V
DS
=5V, V
GS
=0, f=1MHz
V
DS
=5V, V
GS
=0, f=1MHz
150
0.4
1.2
3.5
0.65
Min.
-20
Typ.
-0.6
Max.
-1.5
350
Units
V
V
µA
ms
pF
pF
©2002 Fairchild Semiconductor Corporation
Rev. B1, April 2002

KSK595HM Related Products

KSK595HM KSK595MTF
Description Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, SOT-23, 3 PIN Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, SOT-23, 3 PIN
Maker Fairchild Fairchild
Parts packaging code SOT-23 SOT-23
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR SINGLE WITH BUILT-IN DIODE AND RESISTOR
Maximum drain current (ID) 0.001 A 0.001 A
FET technology JUNCTION JUNCTION
JESD-30 code R-PDSO-G3 R-PDSO-G3
Number of components 1 1
Number of terminals 3 3
Operating mode DEPLETION MODE DEPLETION MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
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