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FDMS7620S_F106

Description
mosfet 30v dual N-channel powertrench
Categorysemiconductor    Discrete semiconductor   
File Size336KB,12 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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FDMS7620S_F106 Overview

mosfet 30v dual N-channel powertrench

FDMS7620S_F106 Parametric

Parameter NameAttribute value
ManufactureFairchild Semiconduc
Product CategoryMOSFET
RoHSYes
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage30 V
Vgs - Gate-Source Breakdown Voltage+ /- 20 V
Id - Continuous Drain Curre12.4 A
Rds On - Drain-Source Resistance20 mOhms
ConfiguratiDual
Vgs th - Gate-Source Threshold Voltage2.2 V
Qg - Gate Charge15.6 nC
Maximum Operating Temperature+ 150 C
Pd - Power Dissipati2.5 W
Mounting StyleSMD/SMT
Package / CasePower-56-8
PackagingReel
Fall Time1.5 ns
Forward Transconductance - Mi53 S
Minimum Operating Temperature- 55 C
Rise Time1.8 ns
Factory Pack Quantity3000
Typical Turn-Off Delay Time17.4 ns
FDMS7620S Dual N-Channel PowerTrench
®
MOSFET
March 2011
FDMS7620S
Dual N-Channel PowerTrench
®
MOSFET
Q1: 30 V, 10.1 A, 20.0 mΩ Q2: 30 V, 12.4 A, 11.2 mΩ
Features
Q1: N-Channel
Max r
DS(on)
= 20.0 mΩ at V
GS
= 10 V, I
D
= 10.1 A
Max r
DS(on)
= 30.0 mΩ at V
GS
= 4.5 V, I
D
= 7.5 A
Q2: N-Channel
Max r
DS(on)
= 11.2 mΩ at V
GS
= 10 V, I
D
= 12.4 A
Max r
DS(on)
= 14.2 mΩ at V
GS
= 4.5 V, I
D
= 10.9 A
Pinout optimized for simple PCB design
Thermally efficient dual Power 56 Package
RoHS Compliant
General Description
This device includes two specialized MOSFETs in a unique dual
Power 56 package. It is designed to provide an optimal synchro-
nous buck power stage in terms of efficiency and PCB utilization.
The low switching loss “High Side” MOSFET is complementory
by a low conduction loss “Low Side” SyncFET.
Applications
Synchronous Buck Converter for:
Notebook System Power
General Purpose Point of Load
S2
S1/D2
D1
D1
Top
Power 56
D1
D1
S2
S2
G2
5
6
7
Q2
4
3
2
Q1
G1
Bottom
Pin1
8
1
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
I
D
-Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
(Note 4)
T
A
= 25°C
T
A
= 25°C
(Note 3)
T
C
= 25 °C
T
C
= 25 °C
T
A
= 25 °C
Parameter
Q1
30
±20
13
26
10.1
27
9
2.2
1a
1.0
1c
Q2
30
±20
22
42
12.4
45
21
2.5
1b
1.0
1d
mJ
W
°C
A
Units
V
V
-55 to +150
Thermal Characteristics
R
θJA
R
θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
57
1a
125
1c
50
1b
120
1d
°C/W
Package Marking and Ordering Information
Device Marking
FDMS7620S
Device
FDMS7620S
Package
Power 56
1
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
©2011 Fairchild Semiconductor Corporation
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