AUTOMOTIVE GRADE
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
V
DSS
R
DS(on)
I
D (Silicon Limited)
I
D (Package Limited)
D
AUIRFR2607Z
75V
typ.
max.
17.6m
22m
45A
42A
Description
Specifically designed for Automotive applications, this HEXFET
®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide
variety of other applications.
G
S
D-Pak
AUIRFR2607Z
G
Gate
D
Drain
S
Source
Base part number
AUIRFR2607Z
Package Type
D-Pak
Standard Pack
Form
Quantity
Tube
75
Tape and Reel Left
3000
Orderable Part Number
AUIRFR2607Z
AUIRFR2607ZTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(Tested)
I
AR
E
AR
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
45
32
42
180
110
0.72
± 20
96
96
See Fig.15,16, 12a, 12b
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
Symbol
R
JC
R
JA
R
JA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mount)
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.38
50
110
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2015-10-12
Static @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
AUIRFR2607Z
Min. Typ. Max. Units
Conditions
75
––– –––
V V
GS
= 0V, I
D
= 250µA
––– 0.074 ––– V/°C Reference to 25°C, I
D
= 1mA
––– 17.6
22
m V
GS
= 10V, I
D
= 30A
2.0
–––
4.0
V V
DS
= V
GS
, I
D
= 50µA
36
––– –––
S V
DS
= 25V, I
D
= 30A
––– –––
20
V
DS
= 75 V, V
GS
= 0V
µA
––– ––– 250
V
DS
= 75V,V
GS
= 0V,T
J
=125°C
––– ––– 200
V
GS
= 20V
nA
––– ––– -200
V
GS
= -20V
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
34
8.9
14
14
59
39
28
4.5
7.5
1440
190
110
720
130
230
51
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
I
D
= 30A
nC
V
DS
= 60V
V
GS
= 10V
V
DD
= 38V
I
D
= 30A
ns
R
G
= 15
V
GS
= 10V
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
pF
V
GS
= 0V, V
DS
= 1.0V ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 60V ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 60V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
= 30A,V
GS
= 0V
ns T
J
= 25°C ,I
F
= 30A, V
DD
= 38V
nC di/dt = 100A/µs
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Output Capacitance
C
oss
C
oss
Output Capacitance
Effective Output Capacitance
C
oss eff.
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
Reverse Recovery Time
t
rr
Q
rr
Reverse Recovery Charge
t
on
Forward Turn-On Time
Notes:
Typ. Max. Units
–––
–––
–––
30
28
45
180
1.3
45
42
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Limited by T
Jmax ,
starting T
J
= 25°C, L = 0.21mH, R
G
= 25, I
AS
= 30A, V
GS
=10V. Part not recommended for use above this value.
Pulse width
1.0ms;
duty cycle
2%.
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
C
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population. 100% tested to this value in production.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
is measured at T
J
approximately 90°C
R
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 42A.
2
2015-10-12
AUIRFR2607Z
1000
TOP
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
4.5V
1
4.5V
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
Tj = 175°C
1
0.1
1
10
100
0.1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
Fig. 2
Typical Output Characteristics
1000.0
60
Gfs, Forward Transconductance (S)
TJ = 25°C
50
40
30
20
10
0
ID, Drain-to-Source Current
)
100.0
TJ = 175°C
10.0
TJ = 175°C
1.0
TJ = 25°C
VDS = 20V
0.1
2.0
3.0
4.0
5.0
6.0
7.0
60µs PULSE WIDTH
8.0
9.0
10.0
VDS = 10V
380µs PULSE WIDTH
0
10
20
30
40
VGS, Gate-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
Fig. 3
Typical Transfer Characteristics
Fig. 4
Typical Forward Transconductance
Vs. Drain Current
2015-10-12
3
AUIRFR2607Z
2400
2000
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
20
ID= 30A
VDS = 60V
VDS= 30V
VDS= 12V
16
C, Capacitance (pF)
1600
Ciss
12
1200
8
800
400
4
FOR TEST CIRCUIT
SEE FIGURE 13
Coss
Crss
0
1
10
100
0
0
10
20
30
40
50
VDS , Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.0
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ISD , Reverse Drain Current (A)
100.0
100
100µsec
10
TJ = 175°C
10.0
1.0
TJ = 25°C
VGS = 0V
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
10msec
1msec
DC
1000
0.1
0.0
0.4
0.8
1.2
1.6
2.0
2.4
VSD , Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
4
Fig 8.
Maximum Safe Operating Area
2015-10-12
AUIRFR2607Z
50
LIMITED BY PACKAGE
40
ID , Drain Current (A)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.5
ID = 30A
VGS = 10V
2.0
30
1.5
20
10
1.0
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Normalized On-Resistance
Vs. Temperature
10
Thermal Response ( Z thJC )
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
J
J
1
0.1
R
1
R
1
2
R
2
R
2
C
C
Ri (°C/W)
0.71826
0.66173
i
(sec)
0.000423
0.004503
1
2
0.01
Ci=
iRi
Ci=
iRi
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2015-10-12
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