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AUIRFR2607Z

Description
HEXFET® Power MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size656KB,11 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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AUIRFR2607Z Overview

HEXFET® Power MOSFET

AUIRFR2607Z Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-252AA
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)96 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage75 V
Maximum drain current (Abs) (ID)45 A
Maximum drain current (ID)42 A
Maximum drain-source on-resistance0.022 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)110 W
Maximum pulsed drain current (IDM)180 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN OVER NICKEL
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
AUTOMOTIVE GRADE
 
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
 
V
DSS
R
DS(on)
I
D (Silicon Limited)
I
D (Package Limited)
D
AUIRFR2607Z
75V
typ.
max.
17.6m
22m
45A
42A
Description
Specifically designed for Automotive applications, this HEXFET
®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide
variety of other applications.
G
S
D-Pak
AUIRFR2607Z
G
Gate
D
Drain
S
Source
Base part number
AUIRFR2607Z
Package Type
D-Pak
Standard Pack
Form
Quantity
Tube
75
Tape and Reel Left
3000
Orderable Part Number
AUIRFR2607Z
AUIRFR2607ZTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(Tested)
I
AR
E
AR
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
45
32
42
180
110
0.72
± 20
96
96
See Fig.15,16, 12a, 12b
-55 to + 175
300
 
Units
A
W
W/°C
V
mJ
A
mJ
°C 
 
Thermal Resistance
 
Symbol
R
JC
R
JA
R
JA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mount)
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.38
50
110
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2015-10-12

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