TLP155E
TOSHIBA Photocoupler GaAℓAs IRED + Photo IC
TLP155E
Plasma Display Panel (PDP)
Industrial Inverter
MOS FET / IGBT Gate Driver
The Toshiba TLP155E consists of GaAℓAs infrared light emitting diodes and
integrated high gain, high-speed photodetectors. The TLP155E is housed in
the SO6 package.
The photodetector has an internal Faraday shield that provides a
guaranteed common-mode transient immunity of ±15 kV/μs. TLP155E is
suitable for direct gate driving circuit for IGBTs or power MOSFETs.
Unit: mm
6
5
4
1
3
3.7
-0.15
+0.25
4.55
+0.25
-0.15
7.0
±
0.4
0.1 2.1
±
0.1
0.15
Buffer logic type (Totem pole output)
Package type:
SO6
IOP =
±0.6A
(max)
-40 to 100℃
1.27
2.54
0.4
0.5 min
Peak Output Current :
Guaranteed performance over temperature:
Threshold Input Current: IFLH = 7.5 mA (max)
Propagation delay time : tpLH / tpHL = 200ns (max)
Common mode transient immunity
Isolation voltage
: ±15kV/μs
（min）
: 3750
Vrms
(min)
JEDEC
―
JEITA
―
TOSHIBA
11-4L1
weight: 0.08 g (typ)
UL approved : UL1577, File No.E67349
c-UL approved :CSA Component Acceptance Service
No. 5A, File No.E67349
Option(V4) VDE under application : EN60747-5-2
Maximum operating insulation voltage : 707 Vpk
Highest permissible over voltage : 6000 Vpk
(Note) When a EN60747-5-2 approved type is needed,
Please designate the “option(V4)”
Pin Configuration (Top View)
1
6
5
3
SHIELD
4
1:ANODE
3:CATHODE
4:GND
5:V
O
(Output)
6:V
CC
Truth Table
Input
H
L
LED
ON
OFF
M1
ON
OFF
M2
OFF
ON
Output
H
L
I
F
1+
(M1)
Schematic
I
CC
6
V
CC
Construction Mechanical Ratings
Creepage distance
Clearance distance
Insulation thickness
5.0 mm (min)
5.0 mm (min)
0.4 mm (min)
V
F
3−
(M2)
I
O
5
V
O
4
GND
SHIELD
1
2012-08-09
TLP155E
Absolute Maximum Ratings
(Ta
=
25 °C)
CHARACTERISTIC
Forward Current
Forward Current Derating
LED
Pulse Forward Current
Reverse Voltage
Junction Temperature
“H” Peak Output Current (Note2)
DETECTOR
“L” Peak Output Current (Note2)
Output Voltage
Supply Voltage
Junction Temperature
Operating frequency (Note3)
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
(10 s)
(Note 4)
Isolation Voltage (AC,1 min.,R.H.
≤
60%,Ta=25°C)
(Ta
≥
92°C)
SYMBOL
IF
ΔI
F /°C
IFPT
VR
Tj
IOPH
IOPL
VO
VCC
Tj
f
Topr
Tstg
Tsol
BVs
(Note 1)
RATING
20
-0.63
1
5
125
-0.6
0.6
35
35
125
250
-40 to 100
-55 to 125
260
3750
UNIT
mA
mA/°C
A
V
°C
A
A
V
V
°C
kHz
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width
≤
1
μs,
300pps.
Note 2: Exponential waveform pulse width P
W
≤
2
μs,
f
≤
10 kHz, VCC=20V, Ta=-40~100°C
Note 3: Exponential waveform pulse width P
W
≤
80 ns, IOPH≥-0.25A, IOPL≤0.25A, VCC=20V, Ta=-40~100°C
Note 4: This device is regarded as a two terminal device: pins 1 and 3 are shorted together, as are pins 4, 5 and 6.
Recommended Operating Conditions
CHARACTERISTIC
Input Current, High Level (Note 1)
Input Voltage, Low Level
Supply Voltage*
Peak output current
Operating Temperature
SYMBOL
IFLH
VFHL
VCC
IOPH/ IOPL
Topr
MIN
10
0
10
-
-40
TYP.
-
-
-
-
-
MAX
15
0.8
30
±0.2
100
UNIT
mA
V
V
A
°C
* This item denotes operating range, not meaning of recommended operating conditions.
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this product,
please confirm specified characteristics shown in this document.
Note 1: Input signal rise time (fall time)
<
0.5
μs.
2
2012-08-09
TLP155E
Electrical Characteristics
(Ta
=
−40
to 100 °C, unless otherwise specified)
Characteristics
Forward voltage
Temperature coefficient of forward
voltage
Input reverse current
Input capacitance
“H” Level
(Note 1)
Symbol
V
F
∆V
F
/∆Ta
I
R
C
T
I
OPH1
I
OPH2
I
OPL1
I
OPL2
V
OH
V
OL
I
CCH
I
CCL
I
FLH
V
FHL
V
CC
Test
Circuit
⎯
⎯
⎯
⎯
1
Test Condition
I
F
=
10 mA, Ta
=
25 °C
I
F
=
10 mA
V
R
=
5 V, Ta
=
25 °C
V
=0
V, f
=
1 MHz, Ta
=
25 °C
V
CC
=
15 V
I
F
=
10 mA
V
CC
=
15 V
I
F
=
0 mA
V6-5
=
4 V
V6-5
=
10 V
V5-4
=
2 V
V5-4
=
10 V
I
O
= −100
mA,
I
F
=
10 mA
I
O
=
100 mA,
V
F
=
0.8 V
I
F
=
10 mA
I
F
=
0 mA
Min
1.40
⎯
⎯
⎯
⎯
⎯
0.2
0.4
6.0
⎯
⎯
⎯
⎯
0.8
10
Typ.*
1.55
-1.8
⎯
60
-0.5
⎯
0.5
⎯
8.4
0.3
1.5
1.5
1.0
⎯
⎯
Max
1.80
⎯
10
⎯
-0.2
-0.4
⎯
⎯
⎯
V
1.0
3.0
3.0
7.5
⎯
30
mA
mA
V
V
A
Unit
V
mV/°C
μA
pF
Output current
“L” Level
“H” Level
2
3
Output voltage
“L” Level
Supply current
Threshold input current
Threshold input voltage
Supply voltage
“H” Level
“L” Level
L
→
H
H
→
L
4
5
6
⎯
⎯
⎯
V
CC
=
10 V
V
CC
=
10 to 20 V
V
O
=Open
V
CC
=
15 V, V
O
> 1 V
V
CC
=
15 V, V
O
< 1 V
⎯
*
All typical values are at Ta=25°C.
Note :
This product is more sensitive than conventional products to electrostatic discharge (ESD) owing to its low
power consumption design. It is therefore all the more necessary to observe general precautions regarding
ESD when handling this component.
Note 1: Duration of I
O
time
≤
50
μs,
1 pulse
Isolation Characteristics
(Ta = 25 °C)
Characteristic
Capacitance input to output
Isolation resistance
Symbol
C
S
R
S
Test Condition
V
S
= 0 V , f = 1MHz
R.H.
≤
60 %, V
S
= 500 V
AC, 1 minute
Isolation voltage
BV
S
AC, 1 second, in oil
DC, 1 minute, in oil
(Note 1)
Min
⎯
12
Typ.
0.8
10
14
Max
⎯
⎯
⎯
⎯
⎯
Unit
pF
Ω
V
rms
V
d c
(Note 1) 1×10
3750
⎯
⎯
⎯
10000
10000
Note 1: This device is regarded as a two terminal device: pins 1 and 3 are shorted together, as are pins 4, 5 and 6.
3
2012-08-09
TLP155E
Switching Characteristics
(NOTE)(Ta
=
−40
to 100 °C, unless otherwise specified)
Characteristics
Symbol
Test
Circuit
Test Condition
Ta
=
25 °C
I
F
=
0
→
10 mA
Ta
=
25 °C
I
F
=
10
→
0 mA
V
CC
=
20 V
R
g
=
30
Ω
7
C
g
=
1 nF
f=250kHz
Duty=50%
I
F
=
0
→
10 mA
I
F
=
10
→
0 mA
I
F
=
0
↔
10 mA
I
F
=
0
↔
10 mA
I
F
=
0
→
10 mA
I
F
=
10
→
0 mA
V
CM
=1000
8
Common mode transient immunity
at LOW level output
CM
L
Vp-p
V
CC
=
20 V
Ta
=
25 °C
I
F
=
10 mA
V
O (min)
=
16 V
I
F
=
0 mA
V
O (max)
=
1 V
Min
Typ.*
Max
Unit
L
→
H
tp
LH
⎯
120
170
Propagation delay time
H
→
L
L
→
H
H
→
L
tp
HL
tp
LH
tp
HL
tpsk
| tp
HL
-tp
LH
|
tr
tf
CM
H
⎯
50
50
-85
⎯
⎯
⎯
120
120
120
⎯
5
35
15
⎯
170
200
200
85
50
⎯
⎯
⎯
kV/μs
ns
Propagation delay skew (Note 1)
Switching time dispersion
Output rise time (10−90 %)
Output fall time (90−10 %)
Common mode transient immunity
at HIGH level output
−15
15
⎯
⎯
( * ):
All typical values are at Ta
=
25 °C.
Note :
A ceramic capacitor (0.1
μF)
should be connected from pin 6 (
VCC
) to pin 4 (GND) to stabilize the operation of
the high gain linear amplifier. Failure to provide the bypass may impair the switching property.
The total lead length between capacitor and coupler should not exceed 1 cm.
Note 1: Propagation delay skew is defined as the difference between the largest and smallest propagation delay
times (i.e. t
pHL
or t
pLH
) of multiple samples. Evaluations of these samples are conducted under identical test conditions
(supply voltage, input current, temperature, etc).
4
2012-08-09
TLP155E
Test Circuit 1: I
OPH
1
6
V6-5
I
F
A
I
OPH
V
CC
3
5 0.1μF
3
4
5
Test Circuit 2: I
OPL
1
6
0.1μF
I
OPL
A
V
CC
V5-4
4
Test Circuit 3: V
OH
1
6
V
O
V
I
F
5 0.1μF
3
4
I
O
V
CC
V
F
Test Circuit 4: V
OL
1
6
0.1μF
V
OL
5
3
V
I
O
V
CC
4
*V
OH
=V
CC
-V
O
Test Circuit 5: I
CCH
6
I
CCH
A
0.1μF
5
3
V
CC
Test Circuit 6: I
CCL
1
6
I
CCL
A
0.1μF
5
V
CC
I
F
4
3
4
5
2012-08-09
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