80 & 200μm InGaAs
Avalanche Photodiode
Preamplifier Module
Description
CMC Electronics’ 264-339757-VAR are using a
low noise InGaAs APD with an ionization ratio of
0.2 with a GaAs FET input transimpedance
amplifier in a 12-lead TO-8 package. The
amplifier internal feedback resistor is listed in
the following characteristics table. Each
amplifier has an overload input protection
circuit for fast recovery. The output can be AC
or DC coupled to a 100 ohm load.
MICROELECTRONICS
264-339757-VAR
Features:
•
•
•
•
•
•
Low k of 0.2 (Low excess noise) APD
High Quantum Efficiency 1000-1600nm
Low noise (NEP) TIA
Fast overload recovery
Hermetically-Sealed TO-8 Package
ITAR Free
Applications:
•
•
•
•
Range Finding
LIDAR
Laser Profiling
Free –Space Optical
Communication Systems
Rf
R8
4
8
D
T. Sensor
D1
9
6
7
10
GND/CASE
C1
OVL
Protection
Vgs
InGaAs APD
+
U4
-
OPAMP
OUT
10
1
0
0
0
Figure 1: CMC 264-339757 SERIES BLOCK DIAGRAM
F-38534
MIL-PR
LAB by DLA
TIFIED
CER
MONTREAL
●
OTTAWA
●
CHICAGO WWW.CMCELECTRONICS.CA
200μm InGaAs
Avalanche Photodiode
50MHz Preamplifier Module
(Externally AC coupled through 4.7uF)
MICROELECTRONICS
264-339757-000/001
Electro-Optical Characteristics at T
A
=22°C
Unless otherwise specified: V+=5V, V-=-5V, VR, R
L
=100Ω AC.
Min.
V
R
for specified responsivity......................
Temperature Coefficient of VR.........................
Id APD dark current
Responsivity (R)
1060 nm, M=10
1550 nm, M=10
330
455
25
-
Typ.
NOTE 1
0.080
20
395
580
Max.
80
-
50
-
-
-
V
Unit.
V/°C
nA
kV/W
kV/W
Noise Equivalent Power (NEP = E
n
/R)
1060 nm, M=10
1550 nm, M=10
Output Spectral Noise Voltage Density (E
n
):
Average over 100 kHz to 50Mhz ...
Output Impedance ....................................
Bandwidth, f
-3dB
.............................
Rise Time (10-90%)
Fall Time t
F
(90-10%)
Linear Output Voltage Swing (Pulse)
Output Offset Voltage ..............................
Recovery Time within 250mV of initial Voo
-
-
-
-
50
-
-
1.5
-0.5
150
100
64
10
65
5
5
2.5
0
135
80
-
-
7
7
-
0.5
fW/√Hz
fW/√Hz
nV/√Hz
Ω
MHz
ns
ns
V
V
(-000)
At 1mW, 15ns ovl pulse
(-001)
up to 10W, 5ns ovl pulse Fig-2
TS (Temperature sensor, 1N914 diode)
At 1mA bias
Supply current
Internal Components
R8
C1
Rf
Note : 1 - Vr as specified on datasheet of each module.
V+
V-
-
-
-
150
200
250
ns
ns
-
-
-
-2
25
12
10
10
68
-
40
20
mV/°C
mA
mA
kΩ
nF
kΩ
-38534
IL-PRF
AB by DLA
M
TIFIED L
CER
MONTREAL
●
OTTAWA
●
CHICAGO WWW.CMCELECTRONICS.CA
200μm InGaAs
Avalanche Photodiode
50MHz Preamplifier Module
Overload Recovery Time Data
MICROELECTRONICS
264-339757-000/001
As presented at Defense Security and Sensing in Orlando in April 2010:
B. Dion, N. Bélanger. J. Lauzon, P. Lepage and M. Tremblay, “Improved Performance Ladar Receiver”
Proc. SPIE, Vol.
7684-04, (2010), doi:10.1117/12.850181
Faster recovery allowing shorter minimum distance and shorter discrimination distance for multi-target
application.
0.80
0.70
Recovery time (
μ
s)
0.60
0.50
0.40
0.30
0.20
0.10
0.00
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
2
264-339757-000
264-339757-001
1.E+04
1.E+05
1.E+06
Peak Intensity (W/cm )
Figure 2: Overload Recovery Time Comparison
Saturation level vs Background/Backscattering.
The 264-339757-001 will allow operation in presence of high backscattering power normally observed
in the first few kilometers with high power lasers. In the presence of high backscattering, the front end
transimpedance (Zt) is reduced to prevent saturation; however, within nanoseconds it returns to its
original, higher value as the backscattering fades away.
Zt (kΩ) vs BACKSCATTERING (uW)
80
70
60
Zt (kΩ)
50
40
30
20
10
0
0.01
0.1
1
SATURATION FREE
264-339757-000
264-339757-001
SATURATION
10
100
1000
BACKSCATTERING/BACKGROUND POWER (uW)
Figure 3: Zt vs Background/Backscattering Power
CERT
534
- RF-38
MIL
IF
P
D LAB by DSCC
IE
MONTREAL
●
OTTAWA
●
CHICAGO WWW.CMCELECTRONICS.CA
200μm InGaAs
Avalanche Photodiode
250MHz Preamplifier Module
Electro-Optical Characteristics at T
A
=22°C
(Externally AC coupled through 4.7uF)
MICROELECTRONICS
264-339757-010
Unless otherwise specified: V+=5V, V-=-5V, VR, R
L
=100Ω AC.
Min.
V
R
for specified responsivity......................
Temperature Coefficient of VR.........................
Id APD dark current
Responsivity (R)
1060 nm, M=10
1550 nm, M=10
Noise Equivalent Power (NEP = E
n
/R)
1060 nm, M=10
1550 nm, M=10
1550 nm, M=20
Output Spectral Noise Voltage Density (E
n
):
Average over 100 kHz to 250Mhz ...
Output Impedance ....................................
Bandwidth, f
-3dB
.............................
Rise Time (10-90%)
Fall Time t
F
(90-10%)
Linear Output Voltage Swing (Pulse)
Output Offset Voltage ..............................
Recovery Time within 250mV of initial Voo
At 1mW, 50ns ovl pulse
up to 10W, 5ns ovl pulse Fig-2
TS (Temperature sensor, 1N914 diode)
At 1mA bias
Supply current
Internal Components
R8
C1
Rf
Note : 1 - Vr as specified on datasheet of each module.
V+
V-
50
85
-
-
-
-
-
250
-
-
0.75
-0.5
-
-
25
-
Typ.
NOTE 1
0.080
20
60
100
450
300
225
30
10
300
1.1
1.1
1.0
0
65
250
-2
20
14
10
10
22
Max.
80
-
50
-
-
-
400
-
50
-
-
1.8
1.8
-
0.5
200
400
V
Unit.
V/°C
nA
kV/W
kV/W
fW/√Hz
fW/√Hz
fW/√Hz
nV/√Hz
Ω
MHz
ns
ns
V
V
ns
ns
-
-
-
-
30
20
mV/°C
mA
mA
kΩ
nF
kΩ
CERT
4
RF
B
3853
IL-P
D LA
-
by DSCC
M
IFIE
MONTREAL
●
OTTAWA
●
CHICAGO WWW.CMCELECTRONICS.CA
80μm InGaAs
Avalanche Photodiode
50MHz Preamplifier Module
Electro-Optical Characteristics at T
A
=22°C
(Externally AC coupled through 4.7uF)
MICROELECTRONICS
264-339757-100
Unless otherwise specified: V+=5V, V-=-5V, VR, R
L
=100Ω AC.
Min.
V
R
for specified responsivity......................
Temperature Coefficient of VR.........................
Id APD dark current
Responsivity (R)
1550 nm, M=10
3.5
-
25
-
Typ.
NOTE 1
0.080
10
4.0
45
Max.
80
-
50
-
60
V
Unit.
V/°C
nA
MV/W
fW/√Hz
Noise Equivalent Power (NEP = E
n
/R)
1550 nm, M=10
Output Spectral Noise Voltage Density (E
n
):
Average over 100 kHz to f
-3dB
...
Output Impedance ....................................
Bandwidth, f
-3dB
.............................
Rise Time (10-90%)
Fall Time t
F
(90-10%)
Linear Output Voltage Swing (Pulse)
Output Offset Voltage ..............................
Recovery time within 250mV of initial Voo
For 1mW, 15ns pulse overload
TS (Temperature sensor, 1N914 diode)
At 1mA bias
Supply current
V+
V-
-
-
50
-
-
1.5
-0.5
-
-
-
-
200
10
60
5
5
2.5
0
-
-2
25
12
10
10
470
-
-
nV/√Hz
Ω
MHz
ns
ns
V
V
ns
mV/°C
mA
mA
kΩ
nF
kΩ
7
7
-
0.5
200
-
40
20
Internal Components
R8
C1
Rf
Note : 1 - Vr as specified on datasheet of each module.
CERT
4
RF
B
3853
IL-P
D LA
-
by DSCC
M
IFIE
MONTREAL
●
OTTAWA
●
CHICAGO WWW.CMCELECTRONICS.CA
京公网安备 11010802033920号
EEWORLD
