IRFU110ATU datasheet, PDF - EEWORLD Datasheet

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IRFU110ATU: Description4.7A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3; CategoryDiscrete semiconductor The transistor; File Size992KB，10 Pages; ManufacturerRochester Electronics; Websitehttps://www.rocelec.com/

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IRFU110ATU Overview

4.7A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3

IRFU110ATU Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Parts packaging code	TO-251
package instruction	IPAK-3
Contacts	3
Reach Compliance Code	unknow
Avalanche Energy Efficiency Rating (Eas)	59 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	4.7 A
Maximum drain-source on-resistance	0.4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-251
JESD-30 code	R-PSIP-T3
JESD-609 code	e3
Humidity sensitivity level	NOT APPLICABLE
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT APPLICABLE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	19 A
Certification status	COMMERCIAL
surface mount	NO
Terminal surface	MATTE TIN
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT APPLICABLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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IRFU110ATU Related Products

	IRFU110ATU	IRFR110ATF	IRFR110ATM
Description	4.7A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3	4.7A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3	4.7A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
Is it lead-free?	Lead free	Lead free	Lead free
Parts packaging code	TO-251	TO-252	TO-252
package instruction	IPAK-3	DPAK-3	DPAK-3
Contacts	3	3	3
Reach Compliance Code	unknow	unknown	unknown
Avalanche Energy Efficiency Rating (Eas)	59 mJ	59 mJ	59 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V	100 V
Maximum drain current (ID)	4.7 A	4.7 A	4.7 A
Maximum drain-source on-resistance	0.4 Ω	0.4 Ω	0.4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-251	TO-252	TO-252
JESD-30 code	R-PSIP-T3	R-PSSO-G2	R-PSSO-G2
JESD-609 code	e3	e3	e3
Humidity sensitivity level	NOT APPLICABLE	1	1
Number of components	1	1	1
Number of terminals	3	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT APPLICABLE	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	19 A	19 A	19 A
Certification status	COMMERCIAL	COMMERCIAL	COMMERCIAL
surface mount	NO	YES	YES
Terminal surface	MATTE TIN	MATTE TIN	MATTE TIN
Terminal form	THROUGH-HOLE	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT APPLICABLE	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Base Number Matches	1	1	1
Is it Rohs certified?	-	conform to	conform to
Maker	-	Rochester Electronics	Rochester Electronics
Is Samacsys	-	N	N
Shell connection	-	DRAIN	DRAIN

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