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1N2131

Description
60 A, 200 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size133KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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1N2131 Overview

60 A, 200 V, SILICON, RECTIFIER DIODE

1N2131 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeDO-5
package instructionDO-5, 1 PIN
Contacts1
Reach Compliance Codecompli
applicationPOWER
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.4 V
JEDEC-95 codeDO-203AB
JESD-30 codeO-MUPM-D1
JESD-609 codee0
Maximum non-repetitive peak forward current1050 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature200 °C
Minimum operating temperature-65 °C
Maximum output current70 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time5 µs
surface mountNO
Terminal surfaceTIN LEAD
Terminal formSOLDER LUG
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

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Index Files: 1351  2689  2427  36  821  28  55  49  1  17 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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