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SP001560262

Description
Power Field-Effect Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size545KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

SP001560262 Overview

Power Field-Effect Transistor,

SP001560262 Parametric

Parameter NameAttribute value
MakerInfineon
Reach Compliance Codecompliant
Base Number Matches1
StrongIRFET™
IRFB7546PbF
Application
Brushed Motor drive applications
BLDC Motor drive applications

Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
HEXFET
®
Power MOSFET
 
D
V
DSS
R
DS(on)
typ.
60V
6.0m
7.3m
75A
G
S
max
I
D
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
G
Gate
S
D
G
TO-220AB
IRFB7546PbF
D
Drain
S
Source
Base part number
IRFB7546PbF
Package Type
TO-220
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRFB7546PbF
)
RDS(on), Drain-to -Source On Resistance (m
24
ID = 45A
20
16
12
8
4
0
2
4
6
8
10
12
14
16
18
20
TJ = 125°C
ID, Drain Current (A)
80
60
40
20
TJ = 25°C
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Maximum Drain Current vs. Case Temperature
1
www.irf.com © 2014 International Rectifier
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